varistor n.【電子】變阻器，非線性電阻，可變電阻。
n. 【電子】變阻器，非線性電阻，可變電阻。 “arrester varistor“ 中文翻譯： 防雷用電壓敏電阻器; 陣排列“asymmetrical varistor“ 中文翻譯： 不對稱型變阻器“automatic varistor“ 中文翻譯： 自動變阻器“ceramic varistor“ 中文翻譯： 陶瓷變阻器“film varistor“ 中文翻譯： 膜式壓敏電阻器“sic varistor“ 中文翻譯： 碳化硅可變電阻“silicon varistor“ 中文翻譯： 硅壓敏電阻器“varistor rectifier“ 中文翻譯： 變阻整流器; 非線性電阻整流器“anti-magnetized varistor“ 中文翻譯： 抗耦雙頻激電儀; 消磁電壓敏電阻器“bulk zinc oxide varistor“ 中文翻譯： 體型半導體應變計; 體型氧化鋅變阻器; 體型氧化鋅電壓敏電阻器“field effect varistor“ 中文翻譯： 場效應變阻器“field-effect varistor“ 中文翻譯： 場效變阻器; 場效應變阻器“frequency sensitive varistor“ 中文翻譯： 頻繁變阻器“high energy varistor“ 中文翻譯： 高能電壓敏電阻器“high frequency varistor“ 中文翻譯： 高頻電壓敏電阻器“high pre ure varistor“ 中文翻譯： 高壓壓敏電阻器“high pressure varistor“ 中文翻譯： 高壓壓敏電阻器“metal-oxide varistor (mov)“ 中文翻譯： 金屬氧化壓敏電阻“mov metal-oxide varistor“ 中文翻譯： 金屬氧化壓敏電阻“noise suppressing varistor“ 中文翻譯： 消噪電壓敏電阻器“overvoltage protection varistor“ 中文翻譯： 過電壓保護電壓敏電阻器; 總貌畫面“silicon carbide varistor“ 中文翻譯： 碳化硅電壓敏電阻器; 碳化硅壓敏電阻“single grain layer varistor“ 中文翻譯： 單顆粒層電壓敏電阻器“stabilized voltage varistor“ 中文翻譯： 穩壓電壓敏電阻器“varistor metal oxide“ 中文翻譯： 金屬氧化壓敏電阻“varister“ 中文翻譯： 可調電阻器
Applying qspm matrix analysis , to get the strategy of “ peel off low voltage and semi - conductor ceramic capacitor , develop new type varistor and new type military components “ 運用qspm矩陣分析，得出“剝離低壓、半導體瓷介電容器，開發壓敏電阻和新型軍用元器件產品”的戰略。 |
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varitron |
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The results of experiment indicated that adding a appropriate amount of rare - earths oxide in zinc oxide varistor led to increase potential gradient greatly , decrease leakage current with voltage ratio no changed . when the nd2o3 content is 0 . 04mol % , potential gradient of zinc oxide varistor is maximum , improves about 65 % compared with zinc oxide varistor no containing nd2o3 , voltage ratio and leakage current are the lowest 當nd _ 2o _ 3含量為0 . 04mol時，氧化鋅壓敏閥片的電位梯度達到極值，與不含nd _ 2o _ 3的氧化鋅壓敏閥片相比提高約65 ，且壓比最低，漏電流最小，因此本實驗nd _ 2o _ 3添加量的最佳值為0 . 04mol 。 |
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But the grain growth , grain semiconduction and grain boundary insulation were influenced by many factors , such as the type and contents of dopants , sintering temperature and so on . therefore , in this thesis the effect of the restore sintering temperature , the oxygenize temperature , the donor and acceptor dopant on the dielectric and varistor properties of devices were studied . with sem , the microstructure of srtio3 - based double function ceramic was analyzed 而晶粒生長、晶粒半導化和晶界絕緣化受到多種因素的影響，諸如雜質的種類和含量、燒成溫度等，因此本論文研究了還原燒成溫度、中溫氧化溫度、施主和受主摻雜等對srtio _ 3基陶瓷的壓敏和介電性能的影響，并借助于sem分析對srtio _ 3基雙功能陶瓷的微觀結構進行了分析。 |
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Meanwhile , v2o5 serves as a liquid phase additive , due to its low melting point making zno - v2o5 varistor ceramic densifing at 900 . continuously , the best component of zno - v2o5 varistor in low temperature sintering and multifunctional effects were studied . varistors with excellent electrical properties have been produced in low temperature ( 900 ) sintering by changing the content of zno and v2o5 powders and using different heat treatment system 接著,研究了低溫燒結zno ? v2o5系壓敏陶瓷的配方和多功能效應,為了在較低燒結溫度下( 900 )制備出電性能優異的壓敏電阻器,通過對改變zno和v2o5粉體的量和不同的熱處理工藝的研究,得出當v2o5的量為5 10 - 3mol時,在900下燒結4小時并在655時保溫2小時制備出非線性系數大于40的壓敏電阻器,同時, zno - v2o5系壓敏陶瓷的電阻值隨著溫度的升高而下降,具有ntc ( negativetemperaturecoefficient )效應。 |
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For the ceramic materials , the effects of additives such as pbo , b2o3 , co2o3 , mno2 , cr2o3 , sb2o3 on the electrical properties of bismuth - free zno - glass varistor were studied . the glass phase formed mainly by pbo and b2o3 during sintering process could decrease the sintering temperature , improve grain uniform growth and inhibit grain second growth . nonlinear property could be improved by properly adding co2o3 , mno2 , and cr2o3 對瓷料而言，系統研究了非bi系zno -玻璃料配方體系中pbo 、 b2o3 、 co2o3 、 mno2 、 cr2o3 、 sb2o3等添加劑對壓敏電阻電性能的影響規律，其中， pbo 、 b2o3在燒結過程中形成的玻璃相，可降低燒結溫度，促進晶粒均勻生長，抑制晶粒二次長大， co2o3 、 mno2 、 cr2o3做為非線性添加劑，適量添加可提高樣品的非線性， sb2o3做為改性添加劑，在燒結過程形成的尖晶石相可細化晶粒，抑制晶粒二次生長，改善樣品的綜合電性能。 |
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Zno varistors have been widely used in electronic and electrical power devices and systems because of excellent nonlinear v - i characteristics and high absorbance of electric current surges . with the smt ( surface mounted technology ) development , traditional zno varistors can not meet the multilayer thin films lamination structure nappe varistor ceramics and metal electrode low temperature co - fire need . however , the best character of zno - v2o5 varistor can sinter in common furnace during lower temperature ( 900 ) , not only settling the problem relate to upon , but also saving energy sources Zno壓敏電阻因其優異的v ? i非線性和較高的浪涌吸收能力而廣泛應用在電子、電力設備系統上。然而,隨著表面貼裝技術( smt )的發展,傳統的zno壓敏陶瓷不能滿足多層膜獨石結構疊層壓敏電阻元件陶瓷與金屬電極低溫共燒的需要。而zno ? v2o5系壓敏陶瓷的最大優點是能用普通燒結爐在較低溫度( 900 )下燒結,不僅解決了以上問題,還大大節約了能源。 |
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Firstly , the paper studied the dual effects of v2o5 in zno - v2o5 varistor ceramics during low temperature sintering . the binary varistor ceramic samples of v2o5 filled with zno at 2 . 5 10 - 3mol were prepared , the valence of v ion was studied by esr ( electron spin resonance ) 本文首先研究了v2o5在zno ? v2o5壓敏陶瓷低溫燒結中的雙重作用,制備了v2o5含量為2 . 5 10 - 3mol的單組元zno壓敏陶瓷,采用電子自旋共振譜( esr )研究了v2o5中v離子的價態變化。 |
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Therefore , adding rare - earths oxides ( nd2os > ceo2 and la2o3 ) with appropriate content decreases the size of zno grain evidently and makes the grain size and distribution more homogeneous , then the zinc oxide varistor show outstanding comprehensively performance 因此， ndzo3 、 ceoz和lazo3加入到氧化鋅壓敏閥片中，使zno晶粒尺寸減小，并使晶粒分布更為均勻，從而改善了壓敏閥片的綜合電性能。 |
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Adding 0 . 04mol % nd2o3 improves the varistor voltage remarkably , and at the same time decreases the leakage current and the voltage ratio , then zinc oxide varistor show outstanding comprehensively performance . nano zno powder was added into varistor materials 研究結果表明，壓敏閥片中加入納米氧化鋅后，其壓敏電位梯度顯著提高，當納米zno含量達到sowt %時，壓敏電位梯度可達613 . 73vlmm 。 |
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Grain size , the semiconducting of grain and the insulating of grain boundary were keys to the single - fired process of preparation of srtio3 - based double function ceramic , and affected directly the dielectric and varistor properties 在srtio _ 3基雙功能陶瓷的一次燒成制備過程中，最關鍵的是晶粒生長、晶粒半導化和晶界絕緣化，它們直接影響陶瓷的壓敏和介電性能。 |
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In the experiment of varistor bleeder circuit , the successful load of equal voltage requires that the relation between load and varistor be correctly defined , so as to choose appropriafe experimental instrument 摘要在變阻器分壓電路實驗中，要求負載得到均勻變化的電壓時，怎樣確定負載與變阻器之間的關系，以便在實驗中正確選擇實驗儀器。 |
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In short , adding appropriate amount rare - earths oxide can improve potential gradient greatly , decrease leakage current with voltage ratio no changed and make zinc oxide varistor with outstanding comprehensively performance 總之，添加微量稀土氧化物能夠顯著提高氧化鋅壓敏閥片的電位梯度、降低漏電流，使其具有優良的綜合性能。 |
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The microstruture of the varistor with nano zno was studied . the results show that nano additive reduces the size of zno grain , which leads to the evident improvement of the electrical properties of varistor 因此，可以初步認為加入適量稀土或納米zno提高壓敏閥片的壓敏電位梯度，其原因主要歸結于減小zno晶粒尺寸。 |
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When the content of nano zno is 10wt % , the varistor voltage of zno varistor is higher , the voltage ratio is lower , and the leakage current is the lowest , which means better electrical properties of varistor 納米氧化鋅的添加量為10wt %時，壓敏電位梯度較高，漏電流最小，壓比較低，即壓敏閥片的綜合電性能較好。 |
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Applying qspm matrix analysis , to get the strategy of “ peel off low voltage and semi - conductor ceramic capacitor , develop new type varistor and new type military components “ 運用qspm矩陣分析，得出“剝離低壓、半導體瓷介電容器，開發壓敏電阻和新型軍用元器件產品”的戰略。 |
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If the pulses are of the same polarity , the i - v curve of varistor will become asymmetric , i . e . , the positive degradation is less than the negative degradation 如果所受的突波為單一極性，則受突波侵襲后之樣品的i - v曲線呈現不對稱性，亦即正向劣化程度低于反向劣化程度。 |
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The products we mainly dealt in include all types of ceramic capacitor , aluminum electrolytic capacitor , zinc oxide varistor , integrated circuitries , and diodes 公司所經營的產品包括種陶瓷電容器、鋁電解電容、壓/熱敏電阻、集成電路、二極管等。 |
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Influence of burying sintering process on semi - conductivity and nonlinear properties of tio2 varistor ceramics 2瓷半導化和電學非線性研究 |
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The influence of sintering temperature on the properties of tio2 varistor ceramics 衛生陶瓷凝膠注模成型干燥收縮的人工神經網絡預測 |