varactor n.【電子】變容二極管；可變電抗器。
n. 【電子】變容二極管；可變電抗器。 “diode varactor“ 中文翻譯： 變容二極管“junction varactor“ 中文翻譯： 結變容二極管“surface varactor“ 中文翻譯： 表面變容二極管“varactor diode“ 中文翻譯： 變容二極管“varactor diodes“ 中文翻譯： 變容二極體“varactor meter“ 中文翻譯： 乏時計“varactor mixer“ 中文翻譯： 變容二極管混頻器“varactor multiplier“ 中文翻譯： 變容管倍頻器“varactor tuner“ 中文翻譯： 電調諧高頻頭“varactor tuning“ 中文翻譯： 變容管調諧; 變容器調諧; 可變電抗器調諧“charge-storage varactor“ 中文翻譯： 電荷存儲變容管“charge-stroage varactor“ 中文翻譯： 電荷儲存變容器“gaas varactor diode“ 中文翻譯： 砷化鎵變容二極管; 砷化鎵可變電抗二極管“graded junction varactor“ 中文翻譯： 緩變結變容二極管“hyperabrupt junction varactor“ 中文翻譯： 超突變結變容二極管“point-contact varactor“ 中文翻譯： 點接觸型變容二極管“resonant slope varactor amplifier“ 中文翻譯： 諧振斜率變容二極管放大器“single-varactor parametric amplifier“ 中文翻譯： 單變容管參量放大器“surface charge varactor“ 中文翻譯： 表面電荷變容二極管“tunable varactor diode“ 中文翻譯： 電調諧變容二極管“uhf varactor tuner“ 中文翻譯： 特高頻變容二極管調諧器“varactor diode chopper“ 中文翻譯： 變容二極管調制放大器“varactor diode for parametric amplifier“ 中文翻譯： 參放變容二極管“varactor diode parametric amplifier“ 中文翻譯： 變容二極管參量放大器“varachiu“ 中文翻譯： 瓦拉基烏“varachim“ 中文翻譯： 瓦拉基姆
varec |
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It is presented that the theory and the manufacturing technology of such analog phase shifter , which are made from conventional 3db quadrature hybrids coupler with two identical varactor - diode networks to provide a shifted phase that varies continuously with biased dc voltage . several analog phase shifters have been made for different operating frequencies . each phase shifter has phase range more than 180 , return loss better than - 20db , insertion loss 4 . 8db including 3db attenuator , transmission difference less than0 . 075 db . computer code phases . bas can present the referenced component values 介紹了利用鐵氧體磁環制作窄帶3db耦合器的原理和方法，詳細分析了利用此耦合器設計制作模擬壓控移相器的理論和制作技巧，以及所制作的多種頻率的壓控移相器的測試技術指標和實際運行情況。 |
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Vco ’ s theory and parameters especially for the basic mechanism of phase noise are studied . the parasitic effects of rf - ic passive devices such as inductors and varactors and the design guidelines for the on - chip spiral inductors are included too . the accumulation - mode varactor , which has a higher quality factor value than the inversion - mode mos varactor , is studied in detail 研究電感和變容管這兩種射頻集成無源器件的寄生效應和射頻mos晶體管的熱噪聲模型,提出集成電感的設計原則和優化方法,詳細研究了一種新型的積累型mos可變電容,這種積累型mos變容管比一般的反型mos變容管有更高的品質因數。 |
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It also gives the motive of the ka - band vco and mixer , associated with the subject ' s requirement and the realistic conditions , according to which a proposal is confirmed that the gunn diode and the varactor are mounted in the same cavity to fulfill the vco and an antiparallel diode pair is used to fulfill the harmonic mixer . in chapter 2 , based on the basic theory of negative resistance oscillating , we analyses the gunn oscillator and it ’ s tuning character . chapter 3 introduces the theory of millimeter - wave harmonic mixer 以此為根據結合課題需要和實驗室的實際條件,確定vco采用耿氏管腔體振蕩器形式,變容管與耿氏管安裝在同一個腔內以進一步減小體積,采用反向并聯二極管實現諧波混頻;第二章介紹負阻振蕩器理論及其調諧原理;第三章介紹毫米波諧波混頻器基本原理;第四章給出了振蕩器及諧波混頻器的設計過程,整個組件聯調的結果;最后是結束語,分析了電路中存在的問題,指出了改進方向。 |
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On account of the low q - factor and small tuning range of the p - n junction varactor , the inversion - mode mos varactor is used in the lc voltage controlled oscillator in this thesis . the simulation results show that the designed lc voltage controlled oscillator has 15 % tuning range 3 .由于lc壓控振蕩器中的pn結變容管品質因數低、調諧范圍小,本次設計的lc壓控振蕩器采用了強反型mos變容管,仿真結果表明,所設計的lc壓控振蕩器具有15 %調諧范圍。 |
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While simulating the resonant circuits , we finished a microstrip resonance , which has high q - factor and fits to design w - band low phase noise oscillators . select beam lead hyperabrupt junction varactor and gunn die made in china as vco ’ s frequency turning component and minus resistance 此外,文中還對w頻段微帶結構直流偏置網絡、微帶波導過渡等外圍電路進行了仿真優化,設計方法和結論對毫米波微帶電路設計具有通用的參考價值。 |
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3 . a 4 . 2ghz vco tuned by an accumulation - mode mos varactor in tsmc 0 . 35 m sige bicmos process is obtained after debugging with the simulator spectrerf 3 .基于tsmc的0 . 35微米鍺硅bicmos工藝,采用spectrerf仿真器進行壓控振蕩器的調試和仿真。 |
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Utilizing the benefits of varactor and bowtie and fractal structures , some interesting characteristics of these elements were found 該結構單元為設計寬頻帶、動態方向圖掃描的陣列反射天線奠定了基礎。 |
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Semiconductor discrete device . detail specification for silicon tuning varactor diode for type 2cc51e 半導體分立器件. 2cc51e型硅電調變容二極管詳細規范 |
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Semiconductor discrete device . detail specification for gaas varactor diodes for 2ec600 series 半導體分立器件. 2ec600系列砷化鎵變容二極管詳細規范 |
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Gaas varactor diode 砷化鎵可變電抗二極管 |
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Varactor tuned oscillator 變容二極管黨振蕩器 |
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Analytic expression of capacitance characteristic of voltage - operated varactor 壓控變容二極管電容特性的解析表達式 |
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Varactor diode parametric amplifier 變容二極管參量放大器 |