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triode

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triode n.,adj.【無線電】三極管(的)。

n.,adj. 【無線電】三極管(的)。 “amplifier triode“ 中文翻譯：   放大三極管“amplifying triode“ 中文翻譯：   放大三極管“battery triode“ 中文翻譯：   電池供電式三極管; 電池供電式三級管; 電池三極管“crystal triode“ 中文翻譯：   晶體三極管“diode triode“ 中文翻譯：   二極三極管; 二極三極復合管“diode-triode“ 中文翻譯：   二極三極復合管; 二極三極管“double triode“ 中文翻譯：   雙三極管; 雙三級管“doublediode-triode“ 中文翻譯：   雙二極“driver triode“ 中文翻譯：   激勵三極管“dual triode“ 中文翻譯：   雙三極管“duo triode“ 中文翻譯：   雙三極管“duodiode triode“ 中文翻譯：   雙二極管三極管“duodiode-triode“ 中文翻譯：   雙二極三極管“duplex triode“ 中文翻譯：   雙三極管“gas triode“ 中文翻譯：   充氣三極管; 含氣三極管; 氣體行程“generator triode“ 中文翻譯：   振蕩三極管“germanium triode“ 中文翻譯：   鍺三極管“ideal triode“ 中文翻譯：   理想三極管“inverted triode“ 中文翻譯：   倒相三極管; 倒用三極管“inverter triode“ 中文翻譯：   倒向三極管“junction triode“ 中文翻譯：   結型晶體三極管“killer triode“ 中文翻譯：   消色三極管“lighthouse triode“ 中文翻譯：   燈塔式三極管, 盤封三極管“microwave triode“ 中文翻譯：   微波三極管“triode ac semiconductor switch“ 中文翻譯：   三端雙向可控硅開關元件“triodan“ 中文翻譯：   3氨基-α乙基-2; 6三碘肉桂酸

trioecious

The lightning resisting level of microelectronic device , the property of tvs diode and solid - state discharge triode , three grades protection for power source device , grounding and shield requirement for communication system to protect lightning and the lightning troubles in recent years at hubei electric power company were introduced 摘要介紹了微電子器件耐雷水平、新型防雷器件tvs管和固態放電管的特性、電源裝置的三級保護、通信系統防雷接地與屏蔽的有關要求和湖北省電力公司通信系統中近幾年雷害情況。

In the fourth chapter , a fourth - order chebyshev low - pass filter employs new low voltage , highly linear , wide inputting range transconductor is proposed , then we presents a new circuit to tune gm value of transconductor accurately , which employs a new switched - capacitor circuit to change the bias current of transconductor , a third order elliptical function low - pass filter with accurate tunable frequency has been designed using transconductor that is not only with voltage common - mode negative feedback , but also with varying bias - triode transistors which can improve the linearity of this circuit 第四章：提出了一種新的低電壓、高線性度、寬輸入范圍跨導，并由此設計實現了四階切比雪夫( chebyshev )低通濾波器，接著提出了一種寬輸入范圍且具有電壓共模負反饋的全差分跨導，并采用一種新的開關電容電路實現跨導值gm精確可調，從而可以設計得到高性能具有精確截止頻率的跨導-電容三階橢圓函數濾波器。

Jingdapeng in gold in shenzhen city electronics limited company , establish in the 1 9 8 8 , is a well - known integrated circuit in whole country wholesale dealer , company profession selling agent world famous brand ic , two triode transistors and vcd laser first . product is been extensive to apply in tv , vcd , av , stereo set , communication , computer , soldier work etc . electronics product realm . look for for you the every variety be partial to unpopular , already each series ic that stop production . the company source is ample , regarding stock on hand as principle , price contain advantage 深圳市金大鵬電子有限公司,成立于一九八八年是全國知名的集成電路批發商公司專業銷售代理世界名牌ic二三極管及vcd激光頭等。產品廣泛應用于tvvcdav音響通訊電腦軍工等電子產品領域。為您尋找各類偏冷門已停產的各系列ic 。

In the fifth chapter , a new fully differential operational amplifier with voltage and current - mode negative feedback has been proposed , which can stabilize its quiescent operation point , using the characteristic of mos transistors which operate in the triode region acting as active variable resistor , a fully differential fourth - order chebyshev low - pass filter with tunable frequency and bessel low - pass filter with accurate group delay based on r - mosfet - c and operational amplifier has been designed 第五章：提出了一種新的既具有電壓共模負反饋又同時具有電流共模負反饋的全差分運算放大器電路，能較好地穩定電路的靜態工作點，并應用mos管工作在線性區可作有源可變電阻用的特性設計得到了截止頻率可連續調節的高性能r - mosfet - c 、運放結構切比雪夫( chebyshev )和精確群時延值貝塞爾( bessel )低通濾波器。

In the improvement of the traditional robust design , there made full use of the powerful dominant of digital computers , that is to say , using virtual reality technology to proceed test design , effectively upgrading design accuracy and shortening the design period ; managed many targets by fuzzy comprehensive judgment , satisfying the facts of engineering more exactly . on the other hand , there gave a typical example , the design of triode amplification circuit , to explain the common designing process of this design method 在第一部分的序言中，較為詳細地闡述了穩健設計法的提出背景、由來、目前的研究狀況及發展趨勢、穩健設計要實現的目的及實現方法、穩健設計的原理、穩健設計的分類、穩健設計的意義、常用穩健設計的優缺點并提出了對傳統穩健設計法中存在的缺點進行改進的方法和措施。

Mainly for capacitance , semiconductor , jingzhen , resistance , ic chips , jiechajian procedures , connecting pieces , switching devices , silicon , triode , diode , piezoelectric ceramic base films , tubes , electron tubes , electronic stamping , precision metal parts , production processes between cleansing processes 芯片接插件連接件轉接器硅片三極管二極管壓電陶瓷基片顯象管電真空器件等內精密電子沖壓五金零件，生產加工過程工序間的清洗。

The structure of field emission triode is first simulated by magic . the tip height , tip position , tip curvature , gate aperture , and gate voltage are changed , to observe the emission current and the electron congregation 本課題首先采用magic軟件對三極管結構的尖錐場發射陰極進行了模擬計算,分別改變尖錐高度,錐尖位置,尖錐曲率半徑,柵極孔徑及柵極電壓,觀察陽極收集電流及電子束的會聚情況。

In the counting system , a semiconductor laser emitter is used as the light source , point laser beam produced by optic system , reflection of part transferred into electric signal by photoelectric triode , and scm system as the counter 采用半導體激光發射器作為光源，經過光學系統形成的最小激光束照射器件，反射光由光電三極管進行光電轉換，計數控制使用單片機系統。

It is very difficult to research the burning characteristic of high energy propellant in the ddt pipe applying the ionization probe . but the satisfactory results can be easily got using photoelectricity triode 用探針法研究ddt管中高能推進劑的燃燒波和爆轟波的傳播特性，因各種因素的影響難以得到滿意的結果，用光電三極管代替電離探針可得到相對理想的結果。

Specification for harmonized system of quality assessment for electronic components - semiconductor discrete devices - blank detail specification - bidirectional triode thyristors triacs , ambient or case - rated , up to 100 a 電子元器件質量評估協調體系.半導體分立器件.空白詳細規范.電流可達100a的環境溫度額定或外殼溫度額定的雙向三極半導體閘流管

Specification for harmonized system of quality assessment for electronic components - semiconductor discrete devices - blank detail specification - reverse blocking triode thyristors , ambient and case - rated , up to 100 a 電子元器件質量評估的協調體系.半導體分立器件.空白詳細規范.環境溫度額定和外殼溫度額定電流達100a的反向閉塞三極半導體閘流管

Specification for harmonized system of quality assessment for electronic components - blank detail specification : reverse blocking triode thyristors , ambient and case - rated , for currents greater than 100 a 電子元器件質量評估協調體系規范.空白詳細規范:電流大于100a的環境溫度額定和外殼溫度限定反向閉鎖三級半導體閘流晶體管

Semiconductor devices ; discrete devices ; part 6 : thyristors : section 3 : blank detail specification for reverse blocking triode thyristors , ambient and case - rated , for currents greater than 100 a 半導體器件.分立器件.第6部分:晶體閘流管.第3節:電流在100a以下的額定環境和外殼的反向阻擋三極閘流晶體管的空白詳細規范

Semiconductor devices - discrete devices - part 6 : thyristors - section three - blank detail specification for reverse blocking triode thyristors , ambient and case - rated , for currents greater than 100a 半導體器件分立器件第6部分：晶閘管第三篇電流大于100a環境和管殼額定的反向阻斷三極晶閘管空白詳細規范

Semiconductor devices ; discrete devices ; part 6 : thyristors ; section one : blank detail specification for reverse blocking triode thyristors , ambient and case - rated , up to 100 a 半導體器件.分立器件.第6部分:晶閘管.第1節:電流在100a以下的額定環境和外殼的反向阻斷三極閘流晶體管的空白詳細規范

Semiconductor devices . discrete devices . part 6 : thyristors . section one - blank detail specification for reverse blocking triode thyristors , ambient or case - rated , up to 100a 半導體器件分立器件第6部分:閘流晶體管第一篇100a以下環境或管殼額定反向阻斷三極閘流晶體管空白詳細規范

Semiconductor devices discrete devices part 6 : thyristors section two - blank detail specification for bidirectional triode thyristors triacs , ambient or case - rated , up to 100a 半導體器件分立器件第6部分:閘流晶體管第二篇100a以下環境或管殼額定的雙向三極閘流晶體管空白詳細規范

This paper introduces a new method to measure the intensity distribution of single seam diffraction by replacing the silicon photocell and light activated diode with light activated triode 摘要利用光敏三極管代替硅光電池和光敏二極管來測試單縫和雙縫衍射的光強分布。

Since the current produced by light activated triode is larger , it is possible to use common microammeter to measure the photocurrent , making the experiment easier 由于光敏三極管的光電流較大，測試光電流時，可用普通的電流表（微安表）進行測量，使實驗變得簡單可行。