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transconductance

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transconductance n.【電子】互導，跨導。

n. 【電子】互導，跨導。 “average transconductance“ 中文翻譯：   平均互導“conversion transconductance“ 中文翻譯：   變換互導; 變頻互導“dynamic transconductance“ 中文翻譯：   動跨導; 動態跨導“electronic transconductance“ 中文翻譯：   電子跨導“forward transconductance“ 中文翻譯：   正向跨導“neutron transconductance“ 中文翻譯：   中子跨導“static transconductance“ 中文翻譯：   靜互導“transconductance amplifier“ 中文翻譯：   跨導放大器“transconductance bridge“ 中文翻譯：   測量電子管互導的電橋; 互導電橋; 跨導電橋“transconductance meter“ 中文翻譯：   跨導計“amplifier operational transconductance“ 中文翻譯：   運算跨導放大器“control grid plate transconductance“ 中文翻譯：   控制柵板極跨導; 控制柵與板極間互導“control grid-plate transconductance“ 中文翻譯：   控制柵“control-grid plate transconductance“ 中文翻譯：   控制柵-屏極跨導“electronic conversion transconductance“ 中文翻譯：   電子變頻互導“grid plate transconductance“ 中文翻譯：   柵板跨導“grid-to-plate transconductance“ 中文翻譯：   柵屏跨導“high transconductance gun“ 中文翻譯：   高跨導電子槍“high-transconductance tube“ 中文翻譯：   高互導管; 高跨導管“negative transconductance oscillator“ 中文翻譯：   負跨導振蕩器“negative-transconductance oscillator“ 中文翻譯：   負跨導振蕩器“null measurement of transconductance“ 中文翻譯：   補償法互導測定“operational transconductance amplifier“ 中文翻譯：   運算跨導放大器; 運算轉導放大器“small-signal transconductance“ 中文翻譯：   小信號跨導“transcona“ 中文翻譯：   特蘭斯科納“transcomsystems div“ 中文翻譯：   空運通訊系統股份公司

transcontinental

In this paper , the soi technology is applied to the integrated circuit fabrication . soi technology overcomes some disadvantages of bulk silicon because of its inherent structure . it has the advantages such as no latch - up effect , low parasitic capacitance , high transconductance , simple structure , high density and good anti - radiation Soi技術以其獨特的材料結構有效地克服了體硅材料的不足，它具有無閉鎖效應；漏源寄生電容小；較高的跨導和電流驅動能力；器件結構簡單；器件之間距離小；集成度高；抗輻射性能優良等優點。

A complementary input stage , which consists of a p - channel pair and a n - channel pair , was used in the circuit , so that the common mode input range can extend from rail to rail . a dcls is used to shift the n - transistor curve leftward to overlap the p - transistor curve properly and keep constant transconductance in the whole common mode input range 輸入級采用pmos差分輸入對和nmos輸入差分對并聯的結構，從而實現共模輸入范圍擴大到電源的正負兩端，并且通過兩個源級跟隨器平移nmos輸入管跨導曲線，使nmos輸入管和pmos輸入管跨導曲線的適當交疊，從而保持了這個輸入級的跨導在整個共模輸入范圍內保持恒定。

A switch ic for analog signal processing is designed and implemented , which can fulfill the functions of sampling , weighting , controlling and summing of high frequency analog signals . the circuit consists of three parts : four channel analog switches , a voltage reference and the control circuitry . each analog switch is comprised of two high - transconductance n - mosfets with high w / l ratio , which realize the fine tuning and coarse tuning of the input signal respectively 本文研究并設計了一種可對高頻信號進行取樣、加權、控制、疊加的模擬信號處理丌關集成電路，它包括模擬開關、電壓基準源和移位寄存器三個功能模塊，通過兩個高寬長比的高跨導nmos晶體管實現權值的粗調和微調。

The chip is accomplished in the full cooperation with other team members , the author pays particular attention to the analysis of the whole chip architecture and three sub - block design : transconductance amplifier ( ota ) , voltage reference and current reference . based on existed technologies , a new high order temperature compensated voltage reference and a creative current reference with high order temperature compensation are shown respectively . the author simulated all the sub - block and whole chip by hspice 該芯片的設計是由小組成員共同完成,本人主要負責了總體電路的分析、聯合仿真驗證及以下三個子電路的設計: 1 、跨導放大器,詳細分析了bandgap跨導放大器輸入級的動靜態特性及其優缺點,并結合系統要求,設計了一種與cmos工藝相兼容、可替代bandgap跨導放大器的低壓共源共柵跨導放大器。

After structure design aimed to high transconductance , parameters of device structure are modified in detail . the simulation results of soi nmos with strained si channel show great enhancements in drain current , effective mobility ( 74 % ) and transconductance ( 50 % ) beyond conventional bulk si soi nmosfet . the strained - soi nmosfet fabrication process is proposed with lt - si ( low temperature - si ) technology for relaxed sige layer and simox technology for buried oxide 其次,根據器件參量對閾值電壓和輸出特性的影響,以提高器件的跨導和電流驅動能力為目的設計了strained - soimosfet器件結構,詳細分析柵極類型和柵氧化層厚度、應變硅層厚度、 ge組分、埋氧層深度和厚度以及摻雜濃度的取值,對器件進行優化設計。

The thesis has done the widespread investigation and study to the domestic and foreign ’ s technologies of analogy low voltage and low power , and analyzes the principles of work , merts and shortcomings of these technologies , based on the absorption of these technologies , it designs a 1 . 5v low power rail - to - rail cmos operational amplifier . when designing input stage , in order to enable the input common mode voltage range to achieve rail - to - rail , it does not use the traditional differential input pair , but use the nmos tube and the pmos tube parallel supplementary differential input pair to the structure , and uses the proportional current mirror technology to realize the constant transconductance of input stage . in the middle gain stage design , the current mirror load does not use the traditional standard cascode structure , but uses the low voltage , wide - swing casecode structure which is suitable to work in low voltage . when designing output stage , in order to enhance the efficiency , it uses the push - pull common source stage amplifier as the output stage , the output voltage swing basically reached rail - to - rail . the thesis changes the design of the traditional normal source based on the operational amplifier , uses the differential amplifier with current mirror load to design a normal current source . the normal current source provides the stable bias current and the bias voltage to the operational amplifier , so the stability of operational amplifier is guaranteed . the thesis uses the miller compensate technology with a adjusting zero resistance to compensate the operational amplifier 本論文對國內外的模擬低電壓低功耗技術做了廣泛的調查研究,分析了這些技術的工作原理和優缺點,在吸收這些技術成果基礎上設計了一個1 . 5v低功耗軌至軌cmos運算放大器。在設計輸入級時,為了使輸入共模電壓范圍達到軌至軌,不是采用傳統的差動輸入結構,而是采用了nmos管和pmos管并聯的互補差動輸入對結構,并采用成比例的電流鏡技術實現了輸入級跨導的恒定;在中間增益級設計中,電流鏡負載并不是采用傳統的標準共源共柵結構,而是采用了適合在低壓工作的低壓寬擺幅共源共柵結構;在輸出級設計時,為了提高效率,采用了推挽共源級放大器作為輸出級,輸出電壓擺幅基本上達到了軌至軌;本論文改變傳統基準源基于運放的設計,采用了帶電流鏡負載的差分放大器設計了一個基準電流源,給運放提供穩定的偏置電流和偏置電壓,保證了運放的穩定性;并采用了帶調零電阻的密勒補償技術對運放進行頻率補償。

Based upon basic principles of the analog integrated circuit and theories of system stability , this paper deals with high precision , wide band - width and fully differential cmos operational transconductance amplifiers ( ota ) . other than discussions about its performance evaluation and testing , a two - stage full differential ota has also been designed including its core cell and the overall layout 基于模擬集成電路基本理論與系統穩定原理,論文針對高精度、寬帶寬cmos全差分運算放大器( ota )進行了性能指標及測試技術探討,并研究設計了cmos全差分共源共柵兩級ota 、核心單元與總體電路版圖。

Strained - soi mosfet , which appears recently , takes both the advantages of soi ( silicon on insulator ) and sige ( silicon germanium ) . it has shown advantages over bulk sample in enhanced carriers mobility , as well as higher transconductance , stronger drive capability and reduced parasitic capacitances . these properties make it a promising candidate for improving the performance of microelectronics devices Strained - soimosfet是最近幾年才出現的新型器件,它將soi材料和sige材料結合在一起,與傳統體硅器件相比,表現出載流子遷移率高、電流驅動能力強、跨導大、寄生效應小等優勢,特別適用于高性能、高速度、低功耗超大規模集成電路。

Using sige bicmos darlington configuration as the input stage , the input resistance is increased by the mos devices while the transconductance of sige hbts is maintained . in the same time , the equivalent input noise is controlled well because of the sige hbts ’ good noise performance in the input stage 輸入級的設計采用sigebicmos達林頓結構,在保留sigehbt高跨導優勢的基礎上充分利用mos器件來提升運放輸入電阻,此外,基于輸入級中sigehbt良好的噪聲特性,運放的輸入參考噪聲電壓可以大大降低。

Physics device model , component structure design and fabrication technology are discussed based on the thorough analysis of strained silicon and soi physics mechanism . the detail contents are as follows . the analytical threshold voltage model , drain current model and transconductance model are derived from poisson ’ s equation for the fully depleted strained soi mosfet 本論文圍繞這一微電子領域發展的前沿課題,在深入分析應變硅和soi物理機理的基礎上,對器件的物理模型、器件結構設計和工藝實驗等問題作了研究,主要包括以下幾部分:首先,從器件的物理機制出發,建立主要針對薄膜全耗盡型器件的閾值電壓、輸出電流和跨導模型。

With the use of finite method we have developed computer simulation software for vacuum microtriodes with wedge - shaped and cone - shaped cathode on the basis of stduying deeply the field emission theory of vacuum microelectronics . the software included field section , grid point numbering , and the calculation of electric currents , transconductance and cathode capacitance , moreover , it can simulate the properties of vacuum microeletronic with variant structures and sizes . the relationship was studied and simulated among electic properties and device structures , sizes and cathode materials etc . the optimized design of vacuum microtiode was proposed 本文在深入研究真空微電子器件場致發射理論的基礎上，根據圓錐形、楔形陰極真空微電子三極管的不同特點，分別建立了物理和數學模型，在考慮空間電荷密度影響的前提下，以有限元法為基礎采用迭代的方法計算出真空微電子三極管內的電勢分布情況，繪制出了等勢線、電子軌跡線，并得到了器件電學性能隨幾何參數的變化情況。

The factors limiting the frequency band of the wide - band amplifier are introduced . through analyzing the effects of the intrinsic parameters and parasitical on the frequency characteristics , a method of improving fr of mosfet by using short channel device and making mosfet work at the saturation region through raising vgs is put forward ; the effects of different kinds of circuit configurations on the frequency characteristics and the junction voltage on the voltage pattern circuit , current pattern circuit and frequency characteristics are analyzed . according to the linear theory of transconductance which is applied in the bit circuit , the current pattern amplifier circuit , current transfer circuit and output circuit which consist of mosfet and the wide - band amplifier composed of them are put forward 介紹了限制寬帶放大器頻帶寬度的因素，通過分析mosfet的本征參數、寄生參數對頻率特性的影響，提出了采用短溝器件、使mosfet工作在飽和區、抬高柵源電壓等提高mosfet特征頻率的方法；分析了不同電路組態對放大器頻率特性的影響、節點電壓對電壓模電路、電流模電路頻率特性的不同影響，根據應用于雙極晶體管電路的跨導線性原理，提出了采用mosfet構成的電流模放大電路、電流傳輸電路、輸出電路以及由它們所組成的寬帶放大器，獲得了良好的頻率響應。

Specifically analysed and presented the common - mode differential input stage , linear transconductance control circuit of input stage , current sum circuit , floating ab - class control output stage , the bias circuit of op amps and the bandgap reference current source circuit 具體對運放的共模差分輸入級、輸入級線性跨導控制電路、電流和電路、浮動ab類輸出級電路、運放的偏置電路和帶隙參考電流源電路進行分析設計。

The effect of interface state charges on the threshold voltage , drain current , transconductance and field - effect mobility of n - channel sic mosfet is analyzed with numerical method by establishing the model of the interface state density exponential distribution 建立界面態密度的指數分布模型，用數值方法較為詳細的分析了界面態電荷對n溝mosfet器件閾值，漏電流，跨導和場效應遷移率的影響。

The hetrojunction device fabricated with sige material has shown great advantages over bulk sample in many aspects : higher carrier mobility , larger transconductance , stronger drive capability and hence faster circuit speed 與體si器件相比,采用sige材料的異質結器件已經在許多方面顯示出了強大的優勢:譬如更大的載流子遷移率，更大的跨導，更強的電流驅動能力以及更快的電路速度等等。

The study shows that interface state charges not only increase the threshold voltage , but also lower the mosfet transconductance , drain current and field - effect mobility , which can well explain the results of experiment 分析結果顯示界面態電荷不僅使閾值電壓增大，而且還會導致器件漏電流減小，跨導和場效應遷移率降低，模擬結果能對實驗現象做出很好的解釋。

The 2 - stage differential transconductance amplifier is used in the design to achieve high gain . in the design of amplifier , a resister and a miller capacitor is used to deal with the stability and frequency compensation 系統中采用差分跨導運算放大器的設計，為了保證其具備高增益與高穩定性，選用二級結構，并且增加了補償電容和電阻。

Hfets ( modulation doped ) : modfets ? basic device , theory . deep level problem ( transconductance collapse ) ; pseudomorphic solution . telecommunications applications ? key features : gain , bandwidth , linearly , noise 調節摻雜場效電晶體-基本元件，理論。深能階問題(電導崩塌)與假晶方案。通訊應用-主要特點：增益，頻寬，線性度，雜訊。

The innovation of the dissertation is indicated as follows : in the discussion of the ctrl _ gm sub - block , the transconductance stability of operational transconductance amplifier is deeply studied 本論文的創新之處在于:在對ctrl _ gm模塊的論述中,論文對運算跨導放大器( ota )的跨導穩定性進行了較為深入的研究。