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proximity effect 鄰近效應。

proximity talks

Based on the maxwell ' s equations , the one - dimensional foil conductor ' s current density distribution equals the sum of the independent skin effect and the proximity effect current density distributions , and the one - dimensional foil conductor ' s loss equals the sum of the independent skin effect and the proximity effect losses 本文從maxwell電磁場方程出發對一層薄銅箔的趨膚和鄰近損耗進行了研究,得出銅箔的總損耗是趨膚和鄰近效應單獨起作用產生的損耗的和。

Developing the lithography process models to properly characterize critical dimension ( cd ) variations caused by proximity effects and distortions introduced by patterning tool , reticule , resist exposure , development and etching , they are beneficial to develop a yield - driven layout design tool , the engineers could use it to automate the tasks of advanced mask design , verification and inspection in deep sub - micron semiconductor manufacturing 建立準確描述由于掩模制造工藝、光刻膠曝光、顯影、蝕刻所引起的光學鄰近效應和畸變所導致的關鍵尺寸變化的光刻工藝模型,有助于開發由成品率驅動的版圖設計工具,自動地實現深亞微米下半導體制造中先進的掩模設計、驗證和檢查等任務。

Abstract : a new method for determining proximity parameters , , and in electron - beam lithography is introduced on the assumption that the point exposure spread function is composed of two gaussians . a single line is used as test pattern to determine proximity effect parameters and the normalization approach is adopted in experimental data transaction in order to eliminate the need of measuring exposure clearing dose of the resist . furthermore , the parameters acquired by this method are successfully used for proximity effect correction in electron - beam lithography on the same experimental conditions 文摘:在電子散射能量沉積為雙高斯分布的前提下,提出了一種提取電子束光刻中電子散射參數,和的新方法.該方法使用單線條作為測試圖形.為了避免測定光刻膠的顯影閾值,在實驗數據處理中使用歸一化方法.此外,用此方法提取的電子散射參數被成功地用于相同實驗條件下的電子束臨近效應校正

We form a ly a line sample from spectra of 19 qsos in the literature . in this analysis , we demonstrate that a proximity effect is present in the data ; i . e . , there exists a significant deficit of lines at zabs = zem , within 4h - 1 mpc of the qso emission redshift . and the deficit depends on the rest equivalent width of the lines , with weak lines showing a relatively weaker effect 我們發現所選樣本中確實存在接近效應,特別在z _ ( abs ) z _ ( em )附近距類星體4h ~ ( - 1 ) mpc范圍內, ly森林的線數相對演化規律估計得到的線數缺少很顯著,并且與譜線的靜止等值寬度有關,弱線的接近效應較弱。

As the ic manufacturing process develops from sub - micron to very deep submicron ( vdsm ) technologies , with current lithography tools ( 248nm and 193nm ) , foundries can not manufacture products that designs want because of so - called optical proximity effect ( ope ) 當集成電路生產工藝發展到納米級時,利用現有的曝光設備( 248nm和193nm ) ,由于所謂的光學鄰近效應,集成電路制造廠商已經無法制造出滿足電路功能要求的產品。

Piezoresistivity of ecac may involve proximity effect , microcrack and the staggered arrangements of conductive pass - ways due to shear strength of aggregates 壓敏產生的原因是導電瀝青混凝土試件的壓縮鄰近效應、微裂紋和石料間的剪切力使部分導電通路錯位。

Use this setting with vocals or instruments to compensate for proximity effect or to reduce the low frequencies that can make an instrument sound dull or muddy 可用它來補償人聲或樂器的鄰近效應,或降低可使樂器聲音顯得沈悶或拖泥帶水的低頻部分。

It may also be used to compensate for proximity effect or to reduce the low frequencies that can make an instrument sound dull or “ muddy 還可用它來補償鄰近效應,或降低可使樂器聲音顯得沈悶或“拖泥帶水”的低頻部分。

The proximity effect of synmmetrical cable employing copper clad steel as conductor 采用銅包鋼復合線的對稱電纜鄰近效應