x

photoresist

uploads/photoresist.jpg

photoresist n.【物理學】光致抗蝕劑。

n. 【物理學】光致抗蝕劑。 “aqueous photoresist“ 中文翻譯：   液態光阻“development of photoresist“ 中文翻譯：   光致抗蝕劑顯影“double photoresist“ 中文翻譯：   雙重光致抗蝕劑“halide photoresist“ 中文翻譯：   鹵化物光刻膠“insoluble photoresist“ 中文翻譯：   非溶性光刻膠“liquid photoresist“ 中文翻譯：   液體光刻膠“masking photoresist“ 中文翻譯：   掩蔽光刻膠“negative photoresist“ 中文翻譯：   負型光刻膠; 負性膠“photoresist burnoff“ 中文翻譯：   等離子去膠“photoresist coater“ 中文翻譯：   涂膠器“photoresist coating“ 中文翻譯：   光致抗腐蝕涂覆; 抗光蝕涂層“photoresist coatings“ 中文翻譯：   光阻抗蝕劑涂層“photoresist developer“ 中文翻譯：   光刻膠顯影劑“photoresist etching“ 中文翻譯：   光刻膠掩蔽腐蝕“photoresist film“ 中文翻譯：   光刻膠膜“photoresist flaw“ 中文翻譯：   光蝕刻的傷痕“photoresist flow“ 中文翻譯：   光致抗蝕通道“photoresist integrity“ 中文翻譯：   光刻膠完整性“photoresist lacquer“ 中文翻譯：   感光尸“photoresist mask“ 中文翻譯：   光致抗蝕劑掩模; 抗光蝕遮罩“photoresist masking“ 中文翻譯：   光刻膠掩蔽“photoresist process“ 中文翻譯：   光電導管; 光刻法; 抗光蝕處理“photoresist spinner“ 中文翻譯：   旋轉涂膠機“photoresist system“ 中文翻譯：   光阻系統“photoreproduction“ 中文翻譯：   照相復制術“photoreportage“ 中文翻譯：   攝影報道

photosensitive

In study of the laser - llga technique , we introduce and fabricate an adhering mask , in order to obtain a high transmission and high accuracy mask . furthermore , the experiment devices can be simplified by the use of this mask . during the study of uv - liga technology , twice spin - coat method for photoresist azp4903 is explored 在liga技術研究中提出了一次掩膜成型法，簡化了工藝過程；在準分子激光刻蝕技術中，設計了附著式掩膜，提高了尺寸精度，簡化了實驗裝置；在準liga技術中，摸索了azp4903光刻膠的兩次涂膠方法，使結構高度超過100 m 。

A square sensing area was formed upon each of the saw propagation paths using photoresist . when some kind of material deposits on this area , the saw propagation velocity will decrease due to the mass - loading effect , causing a shift in the device ' s oscillation frequency , which gives indication of the mass deposited . the dual - path architecture , one for sensing and one for reference , was used to compensate for the disturbance of temperature 利用光刻工藝在每個聲傳播路徑上構造了一個方形質量沉積區，當有物質沉積到該區時，由于質量沉積效應，聲表面波的波速發生變化，使以延遲線作為反饋回路的振蕩器的振蕩頻率發生變化，并通過這一變化反映出沉積物的質量。

Furthermore , three fourier storage schemes were proposed for practical anti - counterfeiting : ( 1 ) store black - white digital images with hidden information made by image coding method , ( 2 ) store several images on the same spot with reference beams of different directions ( peristeophic multiplexing ) , ( 3 ) store a serious of given images recorded closely ( space multiplexing ) . three different fourier holograms were recorded on photoresist plates following the above three schemes using the optimized recording conditions obtained in the first part of this study work . the reconstructed images form the holograms showed some special anti - counterfeit effects 此外，本課題還研究了傅里葉全息存儲在防偽上的實際應用，提出了三種防偽存儲方案： ( 1 )運用圖像編碼方案，存儲了具有隱藏信息的編碼黑白二值圖像； ( 2 )運用旋轉復用方案，在同一存儲點用不同方向的參考光存儲了多幅圖像； ( 3 )運用空間復用技術，在一定區域內緊靠著記錄一系列特定圖像的傅里葉全息圖。

The influences of recording conditions on the snr of the black - white digital images retrieved from fourier transform holograms were experimentally studied . the holograms were recorded on photoresist plates using an electrical addressed tft - lcslm as a data input device , and a normal ccd camera was applied for detecting reconstructed images 采用電尋址液晶空間光調制器作為存儲系統的組頁器，常規ccd探測器作為重構圖像的檢測器件，實驗研究了在光刻膠干板上記錄黑白二值條紋圖像的傅里葉全息圖時，記錄條件對重構圖像信噪比的影響。

The photoresist is used as recording materials to take the master of embossing hologram , it has the advantage of easily replicate . besides dcg is used because it is an transparent phase recording medium , the information can not be observed before development , so it can be used in the hidden information carry 另外采用dcg作為記錄材料是因為它是一種透明位相材料，存儲后在未用異丙醇處理前是完全透明的，可作為隱型信息存儲加密攜帶，在需要時處理出重要信息。

It has broad application prospect in the following fields such as microelectronics , photoelectronic devices , large screen flat panel display , field emitter array , acoustic surface wave device , photon crystal , light waveguide array , holographic honeycomb lens and micro - optical element array , micro - structure manufacture , fabrication of large area grating and grid of high resolution , photoresist performance testing , profile measurement and metrology , etc . the paper only involves the primary research of interferometric lithography 在微電子、光電子器件、大屏幕平板顯示器、場發射器陣列、表面聲波器件、光子晶體、光波導陣列、全息透鏡和微光學元件陣列、微結構制造，高分辨、大面積光柵和網格制造，在抗蝕劑性能測試、面形測量和計量等領域，干涉光刻技術都具有廣闊的應用前景。

Intensity distribution in photoresist is analyzed during ldw exposure process in terms of the improved theoretical model and the method of selecting the optimal exposure is described . results of ray - tracing using zemax that is optical design software agree well with the calculated results of theoretical model and l dw experimental results verify the accuracy of the model . therefore this improved model is important significant for directing ldw research 本文完善了激光直寫光刻理論，分析了直寫曝光中膠層內光場的分布，探討了最佳曝光量的選擇方案，利用zemax軟件進行光線追跡的結果和理論模擬十分相近，實驗結果驗證了理論模型的正確性，該理論模型對激光直寫光刻技術研究具有重要指導意義。

Finally , microstructures of su - 8 photoresist with difference thickness are manufactured according to previous experimental results . the sem pictures show that the graphics feature good qualities and vertical sidewalls , the thickness of su - 8 photoresist is up to 250 microns and the aspect ratio can reach 10 最后依據前面得到的實驗規律,制作了幾種不同厚度的su - 8膠微結構, sem照片顯示圖形質量較好,側壁垂直,圖形最大高度可達250微米,深寬比可達10 。

The laser - liga technology provided by this research is the first technology to use ultraviolet laser as the exposal source for su - 8 photoresist lithography . it is a technology with lower cost and big potential to increase the aspect ratio as well as wider application 本文首次提出采用紫外激光作為曝光光源的laser - liga技術,對su - 8膠進行曝光光刻不僅成本低、易推廣,而且具有大幅度提高光刻深寬比的潛力。

A beam of light ( typically ultraviolet light from a mercury arc lamp ) shines through the chromium mask , then passes through a lens that focuses the image onto a photosensitive coating of organic polymer ( called the photoresist ) on the surface of a silicon wafer 一束光（通常是汞弧燈發出的紫外光）先穿透鉻光罩，然后通過透鏡把影像聚焦在晶圓表面的有機高分子感光涂料（稱為光阻劑） 。

The paper mainly found on the application of photoresist in the process of ic fabrication to summarize the facets of reaction mechanism , performance index parameters and finally to indicate some new development directions in terms with process evolution target 主要圍繞光刻膠在積體電路制造中的應用，對其反應機理及應用性能指標進行闡述，重點從工藝的角度去提出新的研究方向。

A fast computer simulation of diffraction intensity on the photoresist surface was performed based on kirchhoff ' s diffraction theory and the incoherent super - impose of multi - point source diffraction intensity 利用基爾霍夫衍射理論及多點光源的衍射光場非相干疊加方法，對光刻膠表面的衍射光場進行了快速計算機模擬，并與霍普金斯理論計算結果進行了分析比較。

Rf plasma system 9200 is a barrel - type batch stripping system with optional high temperature capabilities for photoresist removal , nitride etch , and other cleaning applications in semiconductor and mems fabs 射頻等離子體9200是桶式爐脫模體,擁有可控制的高溫系統可去除光阻材料、氮化物蝕刻和半導體與微型機電系統等方面的清洗功能

Photoresist technology is the important constitute of exposure technology , high performance resolution can be attained by using high performance exposure tools with matched high performance photoresist 摘要光刻膠技術是曝光技術中重要的組成部分，高性能的曝光工具需要有與之相配套的高性能的光刻膠才能真正獲得高分辨率的加工能力。

The differences of the monochromaticity and the direction of ultraviolet laser and non - laser ultraviolet source are analyzed firstly . the advantage of ultraviolet laser in exposing su - 8 photoresist is discussed 首先分析了激光紫外光源與普通紫外光源在單色性與方向性上的差異,論證了采用激光紫外光源曝光su - 8光刻膠的優勢。

The parts of the photoresist struck by the light can be selectively removed , exposing parts of the silicon wafer in a way that replicates the original pattern 光阻劑受光照射的部份可以選擇性移除，因此在晶圓上露出原來圖案復制的部份。

The process of su - 8 photoresist lithography is researched , and the influence of steps like coating and soft - bake on the lithography is studied 初步研究了su - 8膠的光刻工藝流程,討論了涂膠、前烘等各個步驟對光刻結果的影響。

Electronic grade : lithium battery , remover of photoresist , epoxy resin rubber trimmings cutting , solid elastomer degrease , coat developing agent 作為有機合成原料：聚乙烯基吡咯烷酮，聚酰胺纖維，腦復康等。

Researchers have used the technique to write lines with widths of only a few nanometers in a layer of photoresist on a silicon substrate 研究人員曾使用這種技術，在矽基座上的光阻層畫出寬度只有幾奈米的線。