P - photolithography 中文

photolithography n.照相平版印刷術。

A different approach , named “ two step growth approach “ has been applied to fabricate an 8x8 photodiode array in the first time . the micro - processing procedures of this photodiode array including standard photolithography , a number of metallisation , wet - chemical etching and sic2 deposition for insulation were developed in this study 首次采用“兩步法”制備出了新穎的8 8zns肖特基光電二極管陣列，詳細研究并確定了制備該器件的標準光刻、金屬沉積、濕化學腐蝕、 sio _ 2絕緣層沉積等一系列微電子處理工藝。
A different approach , named “ two step growth approach “ has been applied to fabricate an 8x8 photodiode array in the first time . the micro - processing procedures of this photodiode array including standard photolithography , a number of metallisation , wet - chemical etching and sic2 deposition for insulation were developed in this study 首次采用“兩步法”制備出了新穎的8 8zns肖特基光電二極管陣列，詳細研究并確定了制備該器件的標準光刻、金屬沉積、濕化學腐蝕、 sio _ 2絕緣層沉積等一系列微電子處理工藝。
photology
The work mainly consists of four parts : the first part is to use oxidation and lpcvd technique to produce sio2 mask film and si3n4 insulation film in order to enhance the heating efficiency of micro chamber , and guarantee the carry out of the reaction . the second part is to use the combination of dry etching and wet etching to produce reaction micro chamber , it is the container which carry out the pcr reaction , and dna sample carry out amplification reaction here . the third part is to use the sputtering , photolithography to produce heaters and temperature sensors which heat the reaction micro chamber and provide the temperature condition for the pcr reaction 首先，利用氧化工藝和lpcvd技術，生長sio _ 2掩膜層和si _ 3n _ 4絕緣層，以提高反應腔的熱效率，保證擴增反應的順利進行；其次，用濕法腐蝕和干法刻蝕相結合的方法加工微型腔體，使之作為dna樣品進行pcr擴增反應的容器；第三，用濺射、光刻等工藝在微型腔體底部制作微型加熱器和溫度傳感器，實現對反應腔體的加熱及其溫度的精確測量，提供pcr擴增反應所需的溫度條件。
The methods and systems ( including amplitude division double - beam interference system , three - beam interference system , liquid immersion type deep uv interference system and full automatic interference photolithographic system ) for amplitude division maskless laser interference photolithography are studied and compared 研究和比較了振幅分割無掩模激光干涉光刻方法和系統，包括振幅分割雙光束干涉系統、三光束干涉系統、液浸式深紫外干涉系統及全自動干涉光刻系統。
The technologies i explored consist of photolithography technology , lift - off lithography process , technology of growing silicon dioxide films using sol - gel coating technique , and fabrication of na + - k + ion - exchanged glass waveguide . in this thesis , the experiment principles were investigated and the experimental results were given and discussed 本論文中具體研究的工藝內容有：光刻的工藝參數研究；剝離法光刻工藝的研究；用溶膠凝膠法制備二氧化硅膜； na ~ + - k ~ +離子交換玻璃波導的制作。
For the coordination of the contradictory , the wavefront technique has been regarded as an effective method to improve the image quality in photolithography by optimizing the image of the mask . it includes : pupil filtering , phase shift mask , off - axis illumination , optical proximity correction , and so on 為了協調這種矛盾，利用波前工程來改善光刻圖形的質量以提高光刻分辨率，已廣泛地應用于光學光刻中，如：瞳孔濾波、相移掩模、離軸照明、光學鄰近效應校正等。
Saw excitated by input idt is divided axisymmetrily ( y type ) or centrosymmetrily ( s type ) into two pathes and detected by their output idts . there is a mass loading area located accurately in each acoustic path and fabricated by photolithography technology in y type and s type mass loading sensor devices . as the characteristics of saw sensor are greatly influenced by temperature , these sensors have one acoustic path for reference another acoustic path for measurement in order to reduce the influence of temperature 它們各自具有一個輸入idt和兩個輸出idt 。輸入idt激發的saw經過耦合器按軸對稱( y型)和中心對稱( s型)分成兩路，分別由輸出idt檢測輸出。在y型和s型saw質量沉積效應傳感器件的傳播路徑上都有一個由光刻工藝精確定位的質量沉積區。
A different approach , named “ two step growth approach “ has been applied to fabricate an 8x8 photodiode array in the first time . the micro - processing procedures of this photodiode array including standard photolithography , a number of metallisation , wet - chemical etching and sic2 deposition for insulation were developed in this study 首次采用“兩步法”制備出了新穎的8 8zns肖特基光電二極管陣列，詳細研究并確定了制備該器件的標準光刻、金屬沉積、濕化學腐蝕、 sio _ 2絕緣層沉積等一系列微電子處理工藝。
Combining magnetic levitation technology and linear motor drive technology , applying cad / cae method , a new magnetic levitation precise stage is designed and researched , which is step and precise position mechanism in 1c chip manufacture equipment of micro - electronics trade such as laser photolithography equipment . it is an innovative research 將磁懸浮技術和直線驅動技術相結合，采用cad cae技術手段設計研究了一種新型磁懸浮精密定位工作臺，它是針對微電子行業ic芯片制造設備如光刻機而研制的快速步進、精密定位機構，是創新性研究。
In this paper , the development trend of micro - electronics equipment , the progress situation of precision work stage for laser photolithography equipment and the research and evolution of magnetic levitation technology in china and other countries are discussed generally . the main function , the demand of technical index and key technology of laser photolithography work stage are introduced simply . the magnetic levitation technology and the work principle of linear motor are stated , and the design and analysis method of mechatronics cad / cae for magnetic levitation precision stage is presented 本文綜述了微電子制造設備發展趨勢及其精密工作臺如光刻機工作臺的國內外發展現狀及磁懸浮技術研究進展，簡要介紹了光刻機工作臺主要功能、技術指標要求、組成及關鍵技術，概述了磁懸浮技術及直線電機驅動的工作原理，著重研究用機電一體化cad cae集成技術設計、分析磁懸浮精密定位工作臺的方法，闡明了應用cad cae技術研制磁懸浮精密定位工作臺的現實意義。
By studying and using conventional 1c process in combination with electron beam lithography ( ebl ) , reactive ion etching ( rie ) and lift - off process , several efficient results are produced : semiconductor and metal nano - structures are fabricated ; the matching problem of photolithography and electron beam lithography is well solved ; the process efficiency is improved ; the process is offered for the controlled fabrication of nano - structures by repetitious process testing ; several nano - structures such as si quantum wires , si quantum dots , double quantum dot structures and tri - wire metal gate are firstly fabricated by using ebl and rie processes 研究利用常規的硅集成電路工藝技術結合電子束光刻，反應離子刻蝕和剝離等技術制備半導體和金屬納米結構，很好地解決了普通光刻與電子束光刻的匹配問題，提高了加工效率，經過多次的工藝實驗，摸索出一套制備納米結構的工藝方法，首次用電子束光刻，反應離子刻蝕和剝離等技術制備出了多種納米結構(硅量子線、量子點，雙量子點和三叉指狀的金屬柵結構) 。
It has more functions than the common fourier transform because of the fractional order , which results in more applications in optics and information process . but at the present time the new researches about fractional fourier domain filtering applied to improve image quality in photolithography have not been reported 分數傅立葉變換由于具有分數階這一參量，使得它比普通傅立葉變換具有更多的功能，從而導致它在光學和信息處理中必將有更多的應用。
Study on technology of laser direct writing photolithography based on cartesian and polar coordinate by using four - axis ldw system in this dissertation . several doe ' s fabricated by ldw have been applied in practice . the works have laid a foundation for developing more advanced ldw technology 本文開展了直角坐標和極坐標激光直寫光刻理論與工藝研究，激光直寫制作的衍射光學元件已得到了實際應用，為進一步發展激光直寫光刻技術奠定理論與實驗基礎。
Considering the practical manufacturing condition , an oxygen - free copper microchannel heatsink consisting of five copper sheets is designed and fabricated utilizing the technology of deep photolithography , mechanical machining , and bonding with medium 根據實際制作條件，設計了五層結構微通道熱沉，采用深層光刻分離曝光化學腐蝕技術、機械加工技術和銅直接粘接技術( dbc )制備出冷卻大功率半導體激光器迭陣的無氧銅微通道熱沉。
When the two layers of sio2 with different refractive index are finished , the designed mask pattern is printed on the film by photolithography . after that , icp is performed for dry etching , then , the waveguide structures are obtained . at present , the rudimental graph of edg has been obtained 兩層不同折射率的sio _ 2薄膜制備好之后，經過光刻、等離子體刻蝕( icp )的工藝步驟之后，形成了波導結構，初步制作出了器件的圖形。
The insertion loss of the iwtm was about 1 . 5db / mirror . the offset between the waveguide and the mirror was responsible for the loss , which could be eliminated with a higher - resolution photolithography technology and more precise control of the etched mirror position 實驗測得iwtm損耗約為1 . 5db鏡面，損耗主要來源于鏡面和波導間的水平移位，通過提高光刻精度和鏡面腐蝕位置的控制精度，可以使性能得到改善。
Firstly , mems fabrication technology was introduced , ant then some general process geometry model , such as base structure created , deposit , etching , photolithography and bond , was built . then the identifiable process data model was got 本文首先介紹了mems加工技術，并對常用加工工藝：基體創建，沉積，光刻，刻蝕以及鍵合進行幾何建模，得到能夠被三維重構系統識別的數據模型。
At the same time , in order to maintain good fabrication quality , shorten the process time and meet the required due date , it is absolutely necessary to have good rework strategies for wafer rework so as to make up the wafer defects in the photolithography area 為了顧及生產中在制品水平量、產品生?流程時間、產品交期等目標，必須要有良好的再加工策略處理晶圓的再加工。
The grating and reticle , which linewidth errors are less than 10 % nominal linewidth , are fabricated by ldw . for the first time metallic mesh film with area 200mm 200mm fabricated by using ldw photolithography and coating technology 本文完成了直角坐標激光直寫光刻技術研究，開展了離焦激光直寫光刻的工藝研究，制作了光柵和網格分劃板，線寬誤差控制在10 %以內。

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photolithography

photolithography n.照相平版印刷術。

photology