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ohmic

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ohmic adj.1.歐姆的。2.以歐姆計算的。3.使用歐姆定律的...

adj. 1.歐姆的。 2.以歐姆計算的。 3.使用歐姆定律的原理裝置的。 “ohmic conductor“ 中文翻譯：   奧姆導體; 電阻導體; 電阻線; 歐姆導體“ohmic contact“ 中文翻譯：   電阻性接觸; 歐姆接觸“ohmic coupling“ 中文翻譯：   電阻耦合“ohmic dissipation“ 中文翻譯：   歐姆損耗“ohmic drop“ 中文翻譯：   電阻電壓降; 電阻位降; 歐姆降下; 有功電壓降“ohmic electrode“ 中文翻譯：   歐姆電極“ohmic heating“ 中文翻譯：   電阻加熱; 歐姆加熱“ohmic junction“ 中文翻譯：   歐姆接合“ohmic leakage“ 中文翻譯：   漏電阻“ohmic load“ 中文翻譯：   電阻負載“ohmic loss“ 中文翻譯：   電阻損耗; 電阻損失; 耗阻損失; 歐姆損失“ohmic losses“ 中文翻譯：   電阻損失; 歐姆損耗“ohmic metallization“ 中文翻譯：   歐姆接觸金屬化“ohmic polarization“ 中文翻譯：   電阻極化; 歐姆極化“ohmic resistance“ 中文翻譯：   歐姆電阻；直流電阻; 歐姆阻抗; 直羚阻“ohmic resistor“ 中文翻譯：   奧姆電阻器; 歐姆電阻器; 線性電阻器“ohmic short“ 中文翻譯：   歐姆短路“ohmic value“ 中文翻譯：   歐姆值“armature ohmic loss“ 中文翻譯：   電樞銅損“base ohmic contact“ 中文翻譯：   基極歐姆接觸“field ohmic loss“ 中文翻譯：   勵磁電路電阻損耗; 勵磁電路銅損“high ohmic resistance alloy“ 中文翻譯：   高歐姆電阻合金“high ohmic semiconductor“ 中文翻譯：   高電阻半導體“high-ohmic imput resistance“ 中文翻譯：   高歐姆輸入電阻“ohmic base resistance“ 中文翻譯：   基極歐姆電阻“ohmi kangri“ 中文翻譯：   奧米康格里

oho

On the base of the study on sige material physics characteristic , sige / si hetero - junction characteristic , we dissertate the advantage of sige / si hetero - junction power diodes and establish more accurately physical models and propose two novel kinds of fast and soft recovery p + ( sige ) - n - - n + hetero - junction power diodes : the one is p + ( sige ) - n “ - n + diode with the multiplayer gradual changing doping concentration in the n - region , and the other is p + ( sige ) - n “ - n + diode with ideal ohmic contact on the cathode interface 本文針對sige材料的物理特性、 sige si異質結特性建立了準確的物理參數模型。在詳細論述了sige si異質結功率二極管良好特性的基礎上，提出了兩種快速軟恢復sige si功率二極管新結構： n ~ -區采用多層漸變摻雜和陰極側采用理想歐姆接觸。

The results show that crystal inhomogeneities and suitable contacts are critical to the fabrication of high quality cdznte spectrometers . the modified growth technique is a new and promising method for growing highly pure and perfect cdznte single crystals . good quality ohmic contact detectors are achieved when gold or indiumare deposited as electrodes on polished and chemically etched surface 結果表明：材料內部的缺陷和歐姆接觸是影響器件性能的兩個關鍵因素，采用改進的富鎘氣氛下坩鍋旋轉下降法生長的晶體具有較低的缺陷濃度，適合制作探測器，采用au 、 c可得到歐姆接觸。

Up to date , it is still very hard to grow gan bulk crystals , so the heteroepitaxial growth of high quality gan thin films is the premise for the development of gan - based devices . at the same time , the rapid progress on devices requires better ohmic contact between metals and gan , so much more research work must be carried out at once 由于gan體單晶難以制備，生長高質量的薄膜單晶材料是研究開發gan基器件的基本前提條件，同時器件的發展對電極的制備提出了更高的要求，因而研究金屬電極與gan的接觸成為必然。

The main results are listed as follow : the contact relationship between metal and cd1 - xznxte is analyzed theoretically , finding that the main factors affecting ohmic contact are power functions of metal and semiconductor , and surface layer effective states as well , and meanwhile illustrating the laws of factors affecting on the contact resistance . accordingly , materials and construction of electrode film are designed 取得的主要成果如下：理論分析了金屬與cd _ ( 1 - x ) zn _ xte半導體的接觸關系，給出了對金屬與半導體形成歐姆接觸產生影響的主要因素：金屬、半導體的功函數和半導體表面態，以及這兩種影響因素對接觸電阻的影響規律。

With both crt ' s and lcd ' s virtue , fed has a bright future in all kinds of pdf . in this thesis , a new type of field emission cathode was described , that is using simple technique to deposit commercial nano - diamond powder on ti substrates , bonding diamond and ti , and form ohmic - contact by proper high temperature to form cathodes 本文介紹了一種器件結構和制備工藝簡單，易于實現大屏幕顯示，且適于批量生產的新型場發射陰極，即在金屬鈦襯底上均勻涂覆納米金剛石涂層，然后在高溫下退火處理實現兩者的牢固鍵合，并形成歐姆接觸。

Studies on metal - semiconductor contacts of 6h - sic and some interrelated processes condensed - state physics postgraduate : wu ruibin director : gong min the manufacturing processes as well as electrical and thermal characters of 6h - sic ohmic contacts have been studied in this work . in addition , we fabricated au and ni schottky barrier diodes ( sbds ) on silicon surface of n - type 6h - sic 本文討論了n型6h - sic歐姆接觸的制備工藝及其基本電學及熱學特性，并在此基礎上采用金屬au及ni在n型6h - sic硅面( 0001晶向)上制備了具有一定特性的肖特基勢壘二極管。

The main work in this thesis includes two contents as follow : 1 we have investigated the properties of ohmic contact between metal electrode ( al and ti / al electrode ) and n - gan dealed under different annealing conditions . by using xrd sims analytic methods and i - v measuremnet , we analysed the interface between metals and gan , and suggested that it is effect to decrease the value of the ohmic contact 主要工作如下： 1 、研究了al單層及ti al雙層電極與n型si基gan和al _ 2o _ 3基gan在不同退火條件下的歐姆接觸情況，并用x射線衍射譜( xrd ) ，二次離子質譜( sims )對界面固相反應進行了分析。

In this paper , we first presented a comprehensive review of the research history and current status of gan material preparation and characterizations . on the basis of that , we conducted a detailed study of ohmic contact resistivity of metal - gan , and algan - based schottky barrier diode was successfully achieved . in addition , we reported polycrystalline gan epitaxied on silica glass substrates 本論文在系統總結了國內外gan材料制備和器件應用的研究歷史和現狀的基礎上，對金屬與n型gan的歐姆接觸進行了較細致的研究，計算出接觸電阻率，并在此基礎上制備了algan基肖特基二極管原型器件，向gan及其合金的微電子器件研究邁出了重要一步。

The epitaxial struture for ld is an ingaas / gaas / algaas ssqw grin sch structure and the width of the array bar ia 4mm . the low theshold current 2 . 9a the output power 20w at 17 . 5a have been achieved by sioi isolation , ohmic contact and facet coating processes . the central wavelength is 979nm . at the same time , model analyses on the structure of the ssqw ld and the fabrication processes have been made for further research 激光器的生長結構采用ingaas / gaas / algaas分別限制應變單量阱線性緩變折射率波導結構，列陣條寬為4mm ，通過sio _ 2掩膜，歐姆接觸和腔面鍍膜等工藝，實現了閾值電流為2 . 9a ，驅動電流為17 . 5a時輸出功率為20w 。

A mathematical model for the anode of a direct methanol fuel cell ( dmfc ) considering the mass transport in the whole anode compartment and the proton exchange membrane ( pem ) , together with the kinetic and ohmic resistance effects through the catalyst layer is developed . the influences of key parameters on methanol crossover and anode performance are investigated 對于dmfc的陽極，本文描述了甲醇和水在陽極及質子交換膜（ pem ）中的傳遞過程、反應動力學和歐姆阻抗效應，建立陽極和pem的數學模型，并探討對甲醇擴散和陽極性能影響的主要因素。

The procedure to modify the sss code is as follow : at first the hom eos ( equation of state ) is replaced by the sesame eos , secondly the magnetic force is added to the momentum equation , the ohmic heating rate is added to the energy conservation equation 對sss程序改造過程大致如下：首先以sesame數據庫物態方程替換sss程序原有的物態方程；其次在動量守恒方程中加上洛侖茲力項，在能量守恒方程中加上單位質量焦耳加熱項，通過麥克斯韋方程推導出磁擴散方程。

One of the most key technologies of preparing cd1 - xznxte detector is to make ohmic contact film electrode on cd1 - xznxte crystal ' s surface , and the main technology usually used is evaporation , but the cohesion of evaporated film is n ' t very firm 制備cdznte探測器最關鍵的技術之一就是在cdznte表面制備出歐姆接觸薄膜電極。關于在cd _ ( 1 - x ) zn _ xte晶體表面制備接觸電極用導電薄膜，大都是采用蒸發鍍膜技術，膜層與cdznte晶體結合不很牢固。

In the study , it is further shown that the current follows michaelis - menten kinetics in steady state . using the kcsa k + permeation parameters provided by p . h . nelson [ 1 ] , the current - voltage relationship is proved to be ohmic and the concentration - current relationship are also obtained reasonably 由此，在平衡狀態下推出了能斯特( nernst )方程；在穩態條件下，轉導電流滿足米氏動力學關系( michaelis - mentenkinetics ) 。

Due to its advantages of high power capacity , weak dispersion , easier fabrication and low ohmic losses , the folded rectangular groove guide would be an excellent slow - wave structure in millimeter and submillimeter wave twts 曲折矩形槽波導結合了曲折波導散熱能力強、色散特性好、容易加工和矩形槽波導單模工作、低損耗、大尺寸等優點，因此這種新型的慢波系統有可能在毫米波及亞毫米波段的行波管中具有較好的發展前景。

The common adopted ways such as dc internal battery ohmic measurement , ac voltage drop internal battery ohmic measurement and inductance measurement don ’ t have a standard model and have obvious disadvantages and limited test range 就是現在行業內普遍采用的直流放電內阻測量法、交流壓降內阻測量法及電導技術測量法,都沒有一個統一的標準模型,差異性大,測試的范圍和評估準確性相對有限。

In recent decade , internal battery ohmic measurement has become a heated topic of cell users and cell manufactures and it also becomes a hot research topic to measure and predict the performance of cell by inner resistance test 近年來電池內阻的檢測一直是電池用戶和電池廠商之間一個比較熱門的話題,通過快速檢測電池內阻來識別和預測電池的性能成了目前研究領域的熱點問題。

For the purposes to make cd1 - xznxte detector , ohmic contact materials of cd1 - xznxte crystal are selected and structure of electrode is designed . the processing of conducting film prepared by the magnetron sputtering is studied 本研究主要開展了在cdznte晶體上歐姆接觸電極的設計選材和磁控濺射方法制備導電薄膜的工藝研究，為cdznte探測器的制備奠定工藝技術基礎。

Ni ohmic contacts fabricated by traditional evaporation and thermal annealing on temperature of about 1000 have lower contacts resistances . the testing result on 400 does n ' t show it can keep thermal stability 按常規方法鍍鎳( ni )并經1000左右高溫退火得到的歐姆接觸具有更低的室溫比接觸電阻，但400高溫歐姆特性測試表明其熱穩定性不夠好。

In this thesis , the basic characteristics of algan / gan heterojuntion have been analyzed . then fabrication of algan / gan hemt and current collapse are investigated . ti / al / ni / au ohmic contact to low doping gan film is studied 本文以所制得hemt樣品為研究對象,在分析其異質結特性的基礎上,對電流崩塌效應機理作了探索性研究。