M - magnetoresistance 中文

magnetoresistance n.【物理學】磁致電阻。adj.-sistive

magnetoscope
A brief overview of magnetoresistance effect this chaper aims at a brief overview of the history , progress and current status of all kinds of magnetoresistance materials , such as omr , amr , gmr and cmr and so on . by these illustration , we may acquire a basic sight on magnetoresistance effect as well as magnetoelectronics 包括正常磁電阻效應( omr ) 、各向異性磁電阻效應( amr ) 、巨磁電阻效應( gmr ) 、特大磁電阻效應( cmr ) ，通過本章的介紹，我們將對磁電阻效應以及磁電子學都有一個概括的了解。
Otherwise , using the ta buffer layer can effectively reduce the surface roughness . in addition , measured by our measurement system , the polycrystalline the film has similar negative magnetoresistance effect to single - crystalline film , so it is potential to be applied in spintronic devices 通過磁電子輸運測試系統研究制備的薄膜還發現多晶fe _ 3o _ 4具有同單晶fe _ 3o _ 4類似的負磁電阻特性,因此有望將多晶fe _ 3o _ 4薄膜應用到自旋電子器件中。
Mere giant magnetoresistance , which debuted in commercial hard drives back in 1998 , represented the first example of so - called spintronics , or electronics based not on charge but spin , the property of an electron that makes it act like a tiny bar magnet 不過僅有在1998年的商業化硬盤上首度亮相的巨磁電阻效應才是稱之為自旋電子- -或非基于電荷而是旋轉（電子的這個特性使它像一個小型的條形磁鐵）的電子- - - -的首個例子。
The mram needs to be of a large magnetoresistance ( mr ) effect at room temperature and lower magnetic field , in order to demands of practical application . however , the large tunneling mr effect is strongly dependent upon electrode material , which is of high spin polarization 采用高自旋極化率( p )的材料是產生大的隧穿磁電阻( tmr )效應的關鍵之一，而半金屬( half - metal )鐵磁材料的自旋極化率p理論上可達100 。
And sort of like a b - movie franchise , researchers keep uncovering new , more powerful forms of magnetoresistance : colossal magnetoresistance , ballistic magnetoresistance and ( my personal favorite ) extraordinary magnetoresistance , to name three 有些像是拍攝粗制濫造的電影，研究員們不斷地發現了新的更為強大的磁電阻形式：特大磁電阻效應，彈道磁電阻效應，還有（本人最喜歡的） ”非凡“磁電阻效應，僅列出三個為例。
Device applications of physical phenomena are considered , including electrical conductivity and doping , transistors , photodetectors and photovoltaics , luminescence , light emitting diodes , lasers , optical phenomena , photonics , ferromagnetism , and magnetoresistance 包括電導性及摻雜，電晶體、光偵測器及光伏特計，螢光、發光二極體、雷射、光學現象、光電子學、鐵磁性及磁阻性等物理現象之元件應用。
The colossal magnetoresistance ( cmr ) behaviors in perovskite - manganese oxides have attracted great attention due to both fundamental theory of condensed matter physics and potential applications of cmr materials in magnetic devices , e . g . , 鈣鈦礦結構錳氧化物材料所表現出的巨磁電阻效應( cmr ) ，在提高磁存儲密度以及磁傳感器等方面具有十分廣闊的應用前景。近幾年，受到全世界的廣泛關注。
This thesis reports an analytic study on the giant - magnetoresistance of multi - layer sandwich structure and spin - valve structure by using green function quantum statistics approach and nonlinear kubo formula that was derived by sub - dynamics theory 本論文報導使用量子統計格林函數方法以及由子動力學理論推出的非線性響應理論對多層膜三明治結構和自旋閥結構的巨磁電阻效應的解析研究。
( a ) spin - polarized tunneling between ferromagnetic granules is usually regarded as the main transport mechanism in half - metallic granular systems . however , the rapid decay of magnetoresistance in these systems is still a puzzling problem till today 實際上，顆粒邊界本身的性質，如其中局域態的數目、顆粒邊界的磁性等，都會對體系中的輸運機制及磁電阻效應產生極大的影響。
The study of magnetotransport properties in half - metallic granular systems half - metallic granular systems have become one of the candidates for applications of magnetoresistance elements due to their dramatic magnetoresisance effects at low fields 在這些納米尺寸的顆粒體系中，由于大量超細顆粒的存在，必須考慮由庫侖阻塞效應導致的cotunneling機制對磁電阻的顯著影響。
The thesis was originally intended to reveal magnetoresistance effect in two kinds of novel composites : ( 1 ) acicular cro2 / spherical insulating granular composite ; ( 2 ) cro2 granules coated with insulating polymer , respectively 本論文的目的是研究兩類復合材料：針形cro _ 2和球形絕緣顆粒復合型；聚合物包裹cro _ 2顆粒型。
Comparing to the influence of the bias , the variation of the giant - magnetoresistance induced by change of temperature is smaller . it becomes important only in the situation when the variation of temperature is large 與偏壓的影響相比，溫度的改變所引起的巨磁電阻的變化相對較小，只有在溫度變化較大時才有顯著的影響。
In the case when the temperature becomes near to 0 ? k , the decrease of temperature makes the giant - magnetoresistance smaller when the bias is positive , it makes the giant - magnetoresistance larger when the bias is negative 在絕對溫度零度附近， u為正時，溫度下降導致巨磁電阻減小； u為負時，溫度下降導致巨磁電阻增加。
The percentage increase in resistance , called the magnetoresistance ( mr ) , was so big and so unusual that my team immediately redirected its efforts to explain the fundamental physics of this new effect 磁阻（電阻增加的百分比）的值相當大而且不尋常，使我的小組立刻改變研究方向，轉而想要解釋這個新效應的基礎物理。
In this paper , magnetomechanic effect , magneto - caloric effect , magnetoresistance effect and magnetic - optical effect of magnetic material and its application are discussed by thermodynamic functions 摘要本文通過熱力學函數半定量地討論了磁性材料的磁力效應、磁熱效應，并定性地介紹了磁電阻效應和磁光效應及其應用。
In 1998 vedyayev and cooperators calculated giant - magnetoresistance of multi - layer sandwich structure and spin - valve structure by using the linear response kubo formula and green function technology 1998年vedyayev等人運用這個線性響應的kubo公式和格林函數技術計算了多層膜三明治結構和自旋閥結構的巨磁電阻。
The authors deduced the analytic formula for the calculation of the giant - magnetoresistance of multi - layer sandwich structure and spin - valve structure , and also discussed what the calculation results implied 論文作者得出了多層膜三明治結構和自旋閥結構的巨磁電阻效應的解析公式，并分析了結果的意義。
On one hand , in grain regions of films , the strong inter - duster interaction , mentioned as mean field , leads to the colossal magnetoresistance effect ( cmr ) 與此同時，薄膜的拓撲形態分為顆粒區域和顆粒邊界區域。在顆粒區域內，小聚集體之間具有強關聯耦合作用，是這種非均勻體系龐磁阻效應的成因。
Firstly , the paper introduces the theory of the insb magnetosensitive characteristics . and then analyzes in detail about the running principle of the insb magnetoresistance photoelectric sensor 本文首先介紹了insb磁敏效應的基本原理，在此基礎上對insb磁阻型光電傳感器的工作原理進行了分析。

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magnetoresistance

magnetoresistance n.【物理學】磁致電阻。adj.-sistive

magnetoscope