gallium arsenide 砷化鎵〔一種合成化合物，主要用作半導體材料〕。
砷化鎵〔一種合成化合物，主要用作半導體材料〕。 “gallium“ 中文翻譯： n. 【化學】鎵。 “arsenide“ 中文翻譯： n. 砷化物。 “gallium-arsenide“ 中文翻譯： 砷化鉀“aluminium gallium arsenide algaas“ 中文翻譯： 砷化鎵鋁“arsenide gallium monocrystal“ 中文翻譯： 砷化鎵單晶“gaas gallium arsenide“ 中文翻譯： 鎵砷化物“gallium aluminum arsenide“ 中文翻譯： 砷鋁化鎵; 鎵鋁砷“gallium arsenide electrooptic modulator“ 中文翻譯： 砷化鎵電光調制器“gallium arsenide photodiode“ 中文翻譯： 砷化鎵光電二極管“gallium arsenide (gaas)“ 中文翻譯： 砷化鎵“gallium arsenide avalanche photodiode“ 中文翻譯： 砷化鎵雪崩光電二極管“gallium arsenide chip“ 中文翻譯： 砷化鎵晶片“gallium arsenide detector“ 中文翻譯： 砷化鎵探測器“gallium arsenide diode“ 中文翻譯： 砷化鎵二極管“gallium arsenide fet“ 中文翻譯： 砷化鎵場效應晶體管“gallium arsenide injection laser“ 中文翻譯： 砷化鎵注入式激光器“gallium arsenide laser“ 中文翻譯： 砷化鎵激光器“gallium arsenide laser diode“ 中文翻譯： 砷化鎵激光二極管“gallium arsenide logic“ 中文翻譯： 砷化鎵邏輯“gallium arsenide logic gate“ 中文翻譯： 砷化鎵邏輯門“gallium arsenide phosphide“ 中文翻譯： 磷砷化鎵“gallium arsenide photphide“ 中文翻譯： 磷砷化鎵“gallium arsenide posphate“ 中文翻譯： 磷酸鎵砷化物,砷化鎵磷酸鹽“gallium arsenide semiconductor“ 中文翻譯： 砷化鎵半導體“gallium arsenide wafer“ 中文翻譯： 砷化鎵晶圓
gallivant |
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Gaas / algaas quantum well photodetectors ( qwips ) are new type devices and progressed rapidly in recent 20 years . qwips utilizing intersubband absorption between gallium arsenide ( gaas ) well and aluminum gallium arsenide ( alxga1 _ xas ) barriers were perfected . therefore , the ability to accurately control the band structure and hence the spectral response , as well as both established technology for growing and processing gaas optical devices and commercially available large area vlsi gaas ic ' s , makes gaas / algaas qwips attractive devices for use in very large focal plane arrays ( fpas ) , especially available in the range of long wavelength 8 - 12 urn Gaas algaas量子阱紅外探測器( qwips )是近二十年來迅速發展起來的一種新型紅外探測器，它成功地利用了gaas勢阱和al _ xga _ ( 1 - x ) as勢壘之間的子帶間吸收，使之具有能帶結構可精確設計從而獲得指定光譜響應的特點，加之成熟的材料生長技術、器件工藝，以及商業上可獲得大面積的vlsigaas集成電路，使得gaas algaasqwips尤其適宜制作8 12 m長波范圍的大面陣探測器。 |
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Employees of large companies . ( such as ibm , general electric and hewlett packard ) , also frequently break away and form their own small companies to develop , produce and market new advanced products , services and technologies , such as the gallium arsenide high - speed semi - conductor as a replacement for silicon 通用電氣和惠普等大公司的員工也經常離職成立自己的小公司來開發、生產和推廣先進的新產品、服務和技術，例如：用于替代硅的砷化鎵高速半導體。 |
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Such an advance would enable engineers to incorporate both electronic and optical devices onto cheap silicon chips rather than being compelled to employ costly - to - make lasers based on “ exotic ” semiconductor materials such as gallium arsenide or indium phosphide 如果成功，工程師就能在成本低廉的矽晶片上同時制作電子和光學裝置，不需使用砷化鎵或磷化銦等稀有半導體材料，制作成本高昂的半導體雷射。 |
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Used in bipolar chipmaking in place of the more expensive gallium arsenide process , sige allows for significant improvements in operating frequency , current , noise , and power capabilities 在二極管芯片制造中用來代替功耗更高的砷化鎵， sige可以顯著地改善操作頻率、電流、噪音和電源容量。 |
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Method for the determination of 12 species of impurities including copper , maganese , magnesium , vanadium , titanium in high - purity gallium used for gallium arsenide by icp spectrometry 砷化鎵用高純鎵中銅錳鎂釩鈦等12種雜質的等離子體光譜分析法 |
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Testing of materials for semiconductor technology - determination of impurity content in semiconductors by infrared absorption - part 2 : boron in gallium arsenide 半導體工藝材料試驗.通過紅外線吸收測定半導體中雜質 |
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Testing of materials for semiconductor technology - determination of impurity content in semiconductors by infrared absorption - part 1 : carbon in gallium arsenide 半導體工藝用材料的檢驗.通過紅外線吸收測定- -連 |
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Testing of materials for semiconductor technology - determination of dislocations in monocrystals of iii - v - compound semi - conductors - part 1 : gallium arsenide 半導體工藝材料的檢驗. -化合物單晶體錯位的測定 |
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Test method for deep level el2 concentration of undoped semi - insulating monocrystal gallium arsenide by measurement infrared absorption method 非摻雜半絕緣砷化鎵單晶深能級el2濃度紅外吸收測試方法 |
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Preparation of samples of the constant composition region of epitaxial gallium arsenide phosphide for hall effect measurements 測量霍爾效應用恒定成分范圍的外延磷化砷化鎵試樣的制備 |
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Test method for wavelength of peak photoluminescence and the corresponding composition of gallium arsenide phosphide wafers 磷化砷化鎵片的最大光致發光波長及其相應成分的試驗方法 |