F - flashmemory 中文 - EN166

flashmemory 【計算機】快閃內存，閃存。

flashover
Furthermore , based on the proposed new charge pump circuit , a iv to 3 . 3v high voltage generator which is used in analog switch circuit and a 3v to 10v high voltage generator which is applied to eeprom or flash memory are designed , the components and design thought of two high voltage generators are also discussed in detail . and the simulations of two high voltage generators are accomplished by tsmc 0 . 18uw cmos technology ( t018u ) , the outcome testifies that two high voltage generators that take the new charge pump as the core circuit have the higher performance 此外，基于新型的電荷泵電路，設計了用于模擬開關電路的1v到3 . 3v的高壓產生系統和用于flashmemory的3v到10v的高壓產生系統，詳細討論了兩種高壓產生系統的電路組成和設計考慮，并用臺積電0 . 18 mcmos工藝( t018u )對兩種高壓產生系統進行了hspice仿真，結果表明以新型電荷泵電路為核心的兩個高壓產生系統都具有較高的性能。
This article firstly describes the structure and operational principle of a flash memory and analyzes the commonly used structures of its peripheral circuits . . . . . sense amplifier . then emphasizes on illustrating the design of two novel structures of sense amplifier applied in a 3v full - cmos flash memory , and then simulate them using innosis 0 . 15um process technology and obtain satisfying simulation results under different conditions 然后著重論述了兩種應用3v全cmosflashmemory中的全新結構靈敏放大器，并用innosis0 . 15 m工藝，對其進行仿真，得到了不同條件下的仿真結果，結果表明新設計的全新靈敏放大器具有電路結構簡單，讀取速度快等優點，完全能夠滿足flashmemory的要求，達到了預期的目標。
Flash memory becomes an indispensable kind of products of semiconductor memories for its advantage of high speed . its usages in today ' s computer communication and consumer electronics are wide and more popular 如今flashmemory由于其自身的高速的優勢而使得它成為半導體存儲器中不可或缺的一類產品，它在計算機、通訊和消費類電子產品中的應用越來越廣泛，越來越普遍。
Following the enhancement of process technology , the feature size of device becomes smaller , which make the density of flash memory and at the same time performance improved 隨著工藝水平的不斷提高，器件特征尺寸不斷減小，從而使得flashmemory在容量不斷增大的同時性能也在不斷的改善。