field effect transistor 【無線電】場效果晶體管。
【無線電】場效果晶體管。 “field“ 中文翻譯： n. 1.原野，曠野；(海、空、冰雪等的)茫茫一片。 2 ...“effect“ 中文翻譯： n. 1.結果。 2.效能，效果，效力，效應，作用，功效 ...“transistor“ 中文翻譯： n. 【無線電】晶體(三極)管；晶體管[半導體]收音機。 ...“depletion field effect transistor“ 中文翻譯： 耗盡型場效應管“fet field effect transistor“ 中文翻譯： 場效應晶體管“field effect transistor (fet)“ 中文翻譯： 場效應電晶體; 場效應管; 場效應晶體管“field effect transistor circuit“ 中文翻譯： 場效應晶體管線路“field effect transistor preamplifier“ 中文翻譯： 場效應晶體管前置放大器“field effect transistor(fet)“ 中文翻譯： 場效應管“field-effect photo transistor“ 中文翻譯： 場效應光電晶體管“field-effect transistor“ 中文翻譯： 場效晶體管; 場效應管; 場效應晶體管“field-effect transistor multiplier“ 中文翻譯： 場效應管乘法器“field-effect-transistor resistor“ 中文翻譯： 場效晶體管電阻; 場效應晶體管電阻器“grid field effect transistor“ 中文翻譯： 柵場效應晶體管“junction field effect transistor“ 中文翻譯： 面結型場效應晶體管“junction field-effect transistor“ 中文翻譯： 結面型場效應晶體管; 面結型場效應晶體管“microwave field-effect transistor“ 中文翻譯： 微波場效應晶體管“monolithic field effect transistor“ 中文翻譯： 單塊場效應晶體管“mos field effect transistor“ 中文翻譯： mos金屬氧化物半導體場效應晶體管; 金屬氧化物半導體場效應晶體管“multichannel field-effect transistor“ 中文翻譯： 多通道場效晶體管“optical field effect transistor“ 中文翻譯： 光場效應晶體管“pentode field-effect transistor“ 中文翻譯： 五極場效應晶體管“photo field effect transistor“ 中文翻譯： 光控場效應晶體管“photosensitive field-effect transistor“ 中文翻譯： 光敏場效應晶體管“silicon field-effect transistor“ 中文翻譯： 硅場效應晶體管
field event |
|
2 . urease - based field effect transistor biosensor has been fabricated by the transfer of urease / amphiphile mixed langmuir films onto ion - sensitive field effect transistor ( isfet ) . its function has been studied with isfet meter , and the intensity of output signals shows linear relationship with the logarithmic urea concentration from 0 to 20 mm 用lb膜技術將脲酶兩親性分子混合langmuir膜轉移到離子敏感場效應晶體管( isfet )表面，制成了脲酶場效應晶體管生物傳感器；采用離子敏感場效應管特性測定儀對它的性能進行了分析。 |
|
The paper are investigating several alternatives for example quantum dot cellular automata and single electron transistor to substitute conventional field effect transistors ( fet ’ s ) for ultra large scale integrated circuit ; and i take research on the modeling of single electron transistor and single electron cicuit 基于以上考慮,本文研究一些新的基于量子力學原理的器件如量子點細胞自動機( qca ) 、單電子晶體管( set )取代以fet器件為基礎超大規模集成電路,主要在單電子晶體管建模和單電子電路綜合做了一些研究工作。 |
|
There are three power transistor which have been widely used in s band now : bipolar junction transistor ( bjt ) , gaas metal - oxide semiconductor field effect transistor ( gaas mosfet ) and lateral diffuse metal - oxide semiconductor field effect transistor ( ldmos fet ) . thanks to the advantages , such as , wide frequency , easy power supply , good stability , the ldmos fet has used in the motion telecommunication 目前在s波段人們常用的放大器有雙極性晶體管( bjt ) 、砷化鎵場效應晶體管( gaasmosfet ) 、邊緣擴散場效應晶體管（ ldmosfet ）等，由于ldmosfet具有頻帶寬、供電方便、穩定可靠等優勢，目前已經廣泛用于移動通信3g的研究。 |
|
Along with silicon ulsi technology has seen an exponential improvement in virtually any figure of merit , as described by moore ’ s law ; the miniaturization of circuit elements down to the nanometer scale has resulted in structures which exhibt novel physical effects due to the emerging quantum mechanical nature of the electrons , the new devices take advantage of quantum mechanical phenomena that emerge on the nanometer scale , including the discreteness of electrons . laws of quantum mechanics and the limitations of fabrication may soon prevent further reduction in the size of today ’ s conventional field effect transistors ( fet ’ s ) 隨著超大規模集成電路的的發展,半導體硅技術非常好地遵循moore定理發展,電子器件的特征尺寸越來越小;數字集成電路的芯片的集成度越來越高,電子器件由微米級進入納米級,量子效應對器件工作的影響變的越來越重要,尺寸小于10nm將出現一些如庫侖阻塞等新特性。量子效應將抑制傳統晶體管fet繼續按照以前的規律繼續減小。在這種情況下,宏觀的器件理論將被替代,可能需要采用新概念的晶體管結構。 |
|
It has been shown that the performance of sige heterojunction bipolar transistor ( sige hbt ) in high frequency is much better than that of si bipolar junction transistor ( si bjt ) , and is better than that of algaas / gaas metal semiconductor field effect transistor ( algaas / gaas mesfet ) in some aspects Sige異質結雙極晶體管（ sigehbt ）的高頻性能大大優于si雙極晶體管（ sibjt ） ，并在某些方面優于algaas / gaasmesfet ，所以sigehbt具有廣闊的應用前景。 |
|
In order to comprehend operational principle and characteristics of organic static induction transistor , chapter three expatiates operational principle and characteristics of junction field effect transistor and static induction transistor 為了理解有機靜電感應三極管的工作原理和特性，第三章闡述了結型場效應三極管和靜電感應三極管的工作原理和特性。 |
|
This paper chooses bsim3 ( berkeley short - channel igfet model ) the model to be extracted , which is for short channel mos field effect transistor specially . these works are presented in this paper . 1 本論文選取目前業界占主流地位的bsim3 ( berkeleyshort - channeligfetmodel )為將要提取的模型，它是專門為短溝道mos場效應晶體管而開發的一種模型。 |
|
Well , cmos complementary metal - oxide semiconductor chips use metal - oxide semiconductor field effect transistors mosfets . these are fundamentally different from bipolar transistors 哦， cmos （互補金屬氧化物半導體）芯片使用金屬氧化物半導體場效應晶體管（ mosfet ） ，顯然它是一種fei （場效應晶體管） 。 |
|
Due to the advantage of non - destruction read out , ferroelectric field effect transistor ( ffet ) is supposed to be the ideal potential memory device and has been widely investigated 鐵電場效應晶體管( ffet )存儲器能夠實現非破壞性讀出，是一種比較理想的存儲方式，因此從一開始就受到人們極大的關注。 |
|
Discrete semiconductor devices and integrated circuits - field - effect transistors - additional ratings and characteristics and amds in the measuring methods for power switching field effect transistors 分立半導體器件和集成電路.場效應晶體管.電源轉換場效應晶體管測量方法中附加功率特性和amds |
|
Semiconductor devices - discrete devices - part 4 - 1 : microwave diodes and transistors ; microwave field effect transistors ; blank detail specification 半導體器件.分立器件.第4 - 1部分:微波二極管和晶體管.微波領域有效晶體管.空白詳細規范 |
|
Transistor based technology , high power mosfet is used for the vibration element mosfet : metal - oxide semiconductor field effect transistor 三，主要功能特點：全部采用晶體管，振蕩元件采用大功率mosfet場效應管。 |
|
Semiconductor discrete device . detail specification for type cs 6768 and cs 6770 silicon n channel enhancement mode field effect transistor 半導體分立器件. cs6768和cs6770型硅n溝道增強型場效應晶體管詳細規范 |
|
Microwave diodes and transistors - microwave field effect transistors - blank detail specification - bds for microwave field - effect transistors 微波二極管和晶體管.微波場效應晶體管.空白詳細規范 |
|
Semiconductor discrete device . detail specification for type cs0530 and cs0531 gaas microwave power field effect transistor 半導體分立器件. cs0530 cs0531型砷化鎵微波功率場效應晶體管詳細規范 |
|
Based on this , infrared detector and field effect transistor were fabricated and the properties were also tested 并在此基礎上，制備得到了碳納米管基的紅外探測器和場效應晶體管。 |
|
Semiconductor discrete device . detail specification for type cs203 gaas microwave low noise field effect transistor 半導體分立器件. cs203型砷化鎵微波低噪聲場效應晶體管詳細規范 |
|
Semiconductor discrete device . detail specification for type cs0532 gaas microwave power field effect transistor 半導體分立器件. cs0532型砷化鎵微波功率場效應晶體管詳細規范 |
|
Semiconductor discrete device . detail specification for type cs0529 gaas microwave power field effect transistor 半導體分立器件. cs0529型砷化鎵微波功率場效應晶體管詳細規范 |