exciton n.【物理學】激子。adj.-ic ,-ics n.〔用...
n. 【物理學】激子。 adj. -ic ,-ics n. 〔用作單數〕【物理學】激子學。 “bound exciton“ 中文翻譯: 束縛激子“exciton band“ 中文翻譯: 激子[受激]能帶; 激子帶; 激子能帶“exciton condensation“ 中文翻譯: 激子凝聚“exciton density“ 中文翻譯: 激子密度“exciton diffusion“ 中文翻譯: 激子漫射“exciton laser“ 中文翻譯: 激子激光器“exciton level“ 中文翻譯: 激子能級; 受激能級“exciton migration“ 中文翻譯: 激子徙動“exciton model“ 中文翻譯: 激發子模型“exciton spectrum“ 中文翻譯: 激子光譜“exciton transfer“ 中文翻譯: 激子傳遞; 激子轉移“frenkel exciton“ 中文翻譯: 夫倫克爾激子; 富蘭克耳激子“multi-exciton“ 中文翻譯: 多激子“wannier exciton“ 中文翻譯: 瓦尼埃激子“bound exciton line“ 中文翻譯: 束縛激子譜線“bound exciton state“ 中文翻譯: 束縛激子態“exciton binding energy“ 中文翻譯: 激子的結合能“exciton phonon interaction“ 中文翻譯: 激子聲子相互酌“exciton recombination radiation“ 中文翻譯: 激子復合輻射“high density exciton“ 中文翻譯: 高密度激子“self trapped exciton“ 中文翻譯: 自俘獲激子“excitomuscular“ 中文翻譯: 興奮肌肉的“excitomotor center“ 中文翻譯: 興奮運動中樞“excitomotor area“ 中文翻譯: 興奮運動區“excitomotor“ 中文翻譯: 刺激運動的; 興奮運動的“excitometabolic“ 中文翻譯: 促進椿的
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Life time of mn2 + in nano - zns was measured and was found to be close to that of the bulk materials . therefore the quenching centers quench the exciton but not the mn2 + ion self . 2 . the increasing curves are different in film and ethanol colloids because there is diffusion process of quenching centers in colloids 對薄膜樣品的熒光增強曲線的擬合表明,顆粒表面猝滅中心數目隨輻照時間的衰減函數是非e指數形式;同時考慮溶液中猝滅中心通過向顆粒表面的擴散而逐漸耗盡,很好地解釋了溶膠的增強曲線與固體薄膜的增強曲線的不同。 |
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In the paper , by fractional - dimension space model , the relationships between system dimensions and wells width in zno / mgzno quantum well will be studied and the exciton dynamics such as wave functions , radial intensity and bohr radius in zno / mgzno with different well width are studied firstly . secondly , the system dimension , exciton wave functions and absorption spectrum in hexagonal microtube zno film were calculated and simulated , and the confinement of microtube is discussed . then the hexagonal microtube zno films are investigated by capacitance - voltage ( c - v ) measurements and the structure of zno / si were analyzed and modeled 本文利用分數維空間模型,首先研究了zno / mgzno量子阱中系統維度、激子波函數、徑向密度和波爾半徑隨阱寬的變化,從中反映了zno / mgzno量子阱中量子尺寸效應對激子態的影響;其次計算和仿真得到六棱微管zno薄膜的系統維度、激子波函數及吸收譜,討論了微管壁厚對激子的限制情況。 |
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The enthalpy change on dsc curve suggests that the transition is one from low - ordered state to a higher - ordered state . a stacking mood that the 4 - trifluoro - methyl - 2 , 3 , 5 , 6 - tetrafluorophenylmserts in between two perylene - macrocycles is confirmed by theoretical quantum calculation , such an insertion effect leads to the inversion of ( 0 , 0 ) and ( 0 , 1 ) absorption features under low temperature and the dramatic decrease of exciton coupling , which contributes to the spectral similarity in solution and the solid state 量子化學的計算結果支持氟取代的苯環嵌入兩個相鄰的?環之間的分子堆砌方式,使得在常溫到150左右f - ptcdi固體薄膜的紫外-可見吸收光譜的( 0 , 0 )和( 0 , 1 )性狀的強度對比發生“反轉” ;氟取代苯環的嵌入大大降低激子耦合,使固體吸收光譜性狀與溶液類似。 |
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It has high exciton binding energy of 60 mev , which ensures efficient uv emission from the exciton and make it suitable for uv laser - emitting devices . since the first observation of the stimulated ultraviolet emission at room temperature , zno has become another hotspot in the region of uv light emitting researching Zno不僅是繼gan之后紫外發射材料研究的又一研究熱點,而且近年來zno薄膜作為ito薄膜的很有發展前景的替代材料,正引起人們日益廣泛的關注。 |
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Psl occurs while eu2 + transferring from 4fb5d7 to 4f7 or when exciton transferring to 4f7 defectively . we give the physical imagination about several possible migration paths of f center , which offer more full and accurate theory basis to comprehend the cause of psl phenomenon in bafbr : eu2 + crystal 我們詳細給出了在bafbr : eu ~ ( 2 + )晶格中不同位置f心可能移動路徑的物理圖景,從而為更好的理解bafbr : eu ~ ( 2 + )晶格中psl現象的產生提供了更加翔實的理論依據。 |
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In addition , the behaviors of the ptcl exciton in an applying electrostatic field were numerically explored . we came to the results that electric field has strong and interesting effects on the ptcl exciton . no dramatic polarization of the exciton is seen in weak electric field 進一步研究激子對靜電場的響應,發現靜電場對ptcl激子的結構、電荷密度、電子能級均有明顯影響,即電場能夠降低ptcl激子的穩定性使其解離,并導致體系發生結構相變以及發光猝滅。 |
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From absorption spectra and the second - order derivative spectra , three absorption speaks of excitons were clearly resolved . at the same time , the first exciton absorption peak got stronger with decreasing nanocrystals size . blue shifts due to quantum confinement were observed obviously 納晶吸收譜及二次微分譜的測量結果表明,納晶在室溫出現了三個激子吸收峰,第一激子吸收峰隨納晶半徑減小而增強,同時清楚地觀察到納晶受限導致的光譜藍移。 |
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In this thesis , the femtosecond pump - probe experiment system was set up to investigate the exciton tunneling between cdznse qutantum well and cdse quantum dots , micro - raman , raman and photoluminescence with temperature were measured on the cdse quantum dot and cdznse qws / cdse qds complex structure 本論文用我們自己建立的泵浦-探測系統研究了cdse量子點cdznse量子阱結構的激子隧穿和激子復合過程,以及cdse量子點中激子與聲子的耦合。 |
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The uv - visible spectral evolution with particle radium was explained by exciton - coupling theory , it suggested that the change of crystal polymorphs was induced by nanofication - treatment . photoinduced discharge experiments showed a trend that the higher photosensitivity was corresponding to the smaller particle radium ( eg 利用激子偶合理論成功地解釋了納米化對酞菁氧鈦的uv - vis吸收光譜的影響,證明納米化改變了酞菁氧鈦的晶型。 |
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In the photoluminescence ( pl ) spectra , a new emission band due to the exciton - exciton collision process ( p band ) is observed under low excitation intensity at room temperature . and some fine structures origination from the cavity modes of the fabry - p rot etalon could also be seen clearly 在單根zno微柱(直徑有25 m )的p帶發光峰上還可以觀察到明顯的f - p腔模式分布,通過計算得到其腔長為21 m ,同微米柱的尺寸相當。 |
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Nanoparticles show significant quantum - size effect ( such as energy band discreteness , band gap broadening , blue shift in spectra etc . ) as sizes of particles are smaller than bohr radis of exciton of bulk material with same composition ( for example , cds ’ s bohr radium is 6nm ) 當納米粒子的尺寸小于其塊狀材料的激子波爾半徑時(如cds的激子波爾半徑為6nm ) ,能夠表現出明顯的量子尺寸效應(如能帶離散,禁帶變寬,光譜藍移等) 。 |
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We obtained a high quality zno thin film with the pl fwhm of 94 mev at 900 . the free exciton binding energy deduced from the temperature - dependent pl spectra is about 59 mev at 900 , suggesting that the film quality can be improved by annealing process 當退火溫度為900時獲得了高質量的氧化鋅薄膜,光致發光譜的半高寬為94mev ,通過變溫實驗得到激子束縛能為59mev ,表明退火過程提高了薄膜的質量。 |
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This direct band - gap material has a large exciton binding energy ( 60mev ) , which permits excitonic recombination even at room temperature . thus zno is attracting much attention as promising candidates for optoelectric applications in visible and ultraviolet regions 它有較高的激子束縛能(常溫下為60mev ) ,使得其在室溫下可以發射紫外激光,因此作為新一代的半導體發光材料受到廣泛關注。 |
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It is indicated that the cavity modes blueshift with decreased radius , and on decreasing radii there is obvious anticross between the three polaritons resulted from interaction between cavity modes and its corresponding exciton modes 結果表明隨著微腔半徑的減小腔模能量藍移,腔模與相應的重空穴激子模、輕空穴激子模藕合形成的腔極化激元的三支隨著微腔半徑的減小存在明顯的反交叉行為。 |
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Zinc oxide ( zno ) is an important wide band gap ( eg = 3 . 37ev ) semiconductor materials , its exciton binding energy is 60mev . these characters make it is expected to be applied in the ultraviolet optoelectronic devices which can be operated at room temperature 氧化鋅( zno )是一種重要的寬禁帶( eg = 3 . 37ev )半導體材料,其激子束縛能高達60mev ,在室溫紫外光電器件方面有巨大的應用潛力。 |
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Due to the large exciton binding energy of 60mev , which ensures the high efficient excitonic emission at room temperature , it is regarded as one of the most promising materials for fabricating efficient ultraviolet ( uv ) and blue light emitting devices 由于氧化鋅具有較高的激子束縛能( 60mev ) ,保證了其在室溫下較強的激子發光,因而被認為是制作紫外半導體激光器的合適材料。 |
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We got the pl spectrum of zno nanowires using an 806nm fs laser act excited source based nonlinear optical process . the results showed the second harmonic generation ( shg ) phenomenon besides the exciton - exciton collision peak at 388nm , at 實驗中除388nm處的激子-激子碰撞峰之外,還觀測到了二次諧波產生( shg )現象,另外在515nm附近觀測到了由氧空位造成的綠光發射峰。 |
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In low - dimension structure , the exciton binding energy will be lager than bulk material because of quantum effects , so excitons play an important role in optical characteristics of low - dimension zno 在低維結構中,由于量子限制效應,激子束縛能會變得更大,因而在低維zno材料中,激子發光在其光學特性中起著舉足輕重的作用。 |
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Dongxu zhao ( condensed matter physics ) directed by prof . dezhen shen and prof . yichun liu zinc oxide ( zno ) is a wide band - gap semiconductor ( 3 . 37 ev at room temperature ) with the high exciton binding energy of 60 mev = zno是一種寬帶隙的半導體材料,室溫下它的能隙寬度為3 . 37ev ,激子束縛能高達60mev 。 |