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etchant

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etchant n.蝕刻劑。

n. 蝕刻劑。 “anisotropic etchant“ 中文翻譯：   蛤異性腐蝕劑“carbide etchant“ 中文翻譯：   滲碳體浸蝕劑“chemical etchant“ 中文翻譯：   化學腐蝕劑“etchant gas“ 中文翻譯：   腐蝕氣體“etchant resist“ 中文翻譯：   抗蝕膜“etchant solution“ 中文翻譯：   腐蝕溶液“gas etchant“ 中文翻譯：   氣體腐蝕劑“gravure etchant“ 中文翻譯：   凹版腐蝕劑“metallographic etchant“ 中文翻譯：   金相腐蝕液“polishing etchant“ 中文翻譯：   拋光用腐蝕劑“resist-etchant“ 中文翻譯：   刻蝕抗住“selective etchant“ 中文翻譯：   選擇腐蝕劑“silicon etchant“ 中文翻譯：   硅腐蝕劑“spent etchant“ 中文翻譯：   廢浸蝕劑“wet etchant“ 中文翻譯：   液體腐蝕劑“ammonium fluoride etchant“ 中文翻譯：   氟化銨浸蝕劑“etchant regeneration system“ 中文翻譯：   腐蝕劑再生裝置“etchandy“ 中文翻譯：   埃昌迪“etch-resistant coating“ 中文翻譯：   抗蝕刻涂層“etch-pitted plain“ 中文翻譯：   具侵蝕坑的平原“etch-pit distribution“ 中文翻譯：   蝕坑分布“etchants“ 中文翻譯：   浸蝕劑; 蝕刻液“etch-pit density“ 中文翻譯：   蝕坑密度

etcher

Based the eag - i etchant , a new etchant was developed , with which the etch pit pattern on ( 110 ) , ( 111 ) and ( 100 ) faces of czt crystals can emerge immediately and effectually . this pager investigated relation between the ( 110 ) faces of cutting from crystals conveniently and accurately by laser reflex method . by the surface treatment , the nuclear radiation detector was fabricated with ( 110 ) of czt crystal and strong 241am responsibility was observed 在改變e _ ( ag )腐蝕液的配方的基礎上，研制了新的腐蝕液，可方便、快速、有效的顯示czt不同晶面的缺陷蝕坑形貌;研究了利用激光正反射法和自然解理的不同( 110 )面之間的關系，方便、快速、準確的進行定向切割晶體的方法;采用生長的czt單晶體自然解理的( 110 )面，經過表面處理，試制了探測器元件，對24lam有較強的響應。

In this paper , the flow pattern defects ( fpds ) were revealed by secco etchant and their shape , distribution on wafer and tip structure were studied in details by optical microscope and atomic force microscope ( afm ) . the relationship between etching time and the tip structure of fpds was also discussed . furthermore , by studying the effect of rapid thermal annealing ( rta ) on the density of fpds in ar , the annihilation mechanism of fpds was discussed in this paper 本文將cz硅單晶片在secco腐蝕液中擇優腐蝕后，用光學顯微鏡和原子力顯微鏡對流動圖形缺陷( flowpatterndefects , fpds )在硅片中的形態、分布及其端部的微觀結構進行了仔細地觀察和研究，并討論了腐蝕時間對fpds缺陷端部結構的影響；本文還通過研究ar氣氛下快速退火( rapidthermalannealing , rta )對fpds缺陷密度的影響，初步探討了fpds的消除機理。

The relationship between capacitance and corrosion conditions in the enlargement of tunnels justifies the latter competition mechanism the varied etching conditions were implemented by enhancing the passivating characteristics and viscosity , changing the a13 + concentration , temperature of etchants and current pulsation . passivating acid in the etchant is conducive to the instant passivation of exposed areas on the foil surface , and hence sustains the balance of competition between aggressive anions and passivators , providing pit nucleatiori sites continuously 通過侵蝕液中添加草酸、硫酸、乙二醇，改變侵蝕液al ~ ( 3 + )濃度和電流紋波等方法，研究了不同的侵蝕條件對隧道孔形貌和比容的影響，結果表明：草酸和硫酸既保護了鋁箔表面又促進了隧道孔孔壁的迅速鈍化，增加發孔密度。

The addition of surfactant to etchant can protect surface from intense dissolution , and keep a relative similarity of dissolving activity between surface and tunnel walls . in order to gain a satisfactory enlargement of tunnels , the etchant temperature should be controlled at 70 - 90 3a / cm ，嚴重，使比容降低;溶液中添加表面活性劑可以有效地抑制表面溶解，提高比容;適宜的擴孔條件為:溫度80oc ; h +濃度lmol / l0

This etchant can show different defects , such as dislocations , grain boundaries , twins , te - rich inclusions and precipitates etc . , on different planes 這種腐蝕劑能顯示不同晶面上的多種缺陷，如位錯、晶界、富te相等。