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epitaxy

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epitaxy n.【物理學】(晶體)取向附生，外延。epitaxial...

n. 【物理學】(晶體)取向附生，外延。 epitaxial,epitaxic adj. “double epitaxy“ 中文翻譯：   雙外延工藝“epitaxy mechanism“ 中文翻譯：   取向機制“formosa epitaxy“ 中文翻譯：   璨圓光電“graphio epitaxy“ 中文翻譯：   制圖 外延法“hetero epitaxy“ 中文翻譯：   異質外延“hydrothermal epitaxy“ 中文翻譯：   水熱外延“iso-epitaxy“ 中文翻譯：   同質外延“liquid epitaxy“ 中文翻譯：   液相外延“local epitaxy“ 中文翻譯：   局部外延“microwave epitaxy“ 中文翻譯：   微波磊晶片“silicon epitaxy“ 中文翻譯：   硅外延“solid epitaxy“ 中文翻譯：   固相外延“vacuum epitaxy“ 中文翻譯：   真空外延“atomic layer epitaxy“ 中文翻譯：   原子層外延“electron beam epitaxy“ 中文翻譯：   電子束外延生長“electron beam epitaxy (ebe)“ 中文翻譯：   電子束外延生長“epitaxy, molecular-beam“ 中文翻譯：   分子束外延“high resistivity layer epitaxy“ 中文翻譯：   高阻層外延“high temperature epitaxy“ 中文翻譯：   高溫外延“ion beam epitaxy“ 中文翻譯：   離子束外延“laser molecular beam epitaxy“ 中文翻譯：   激光分子束外延“liquid phase epitaxy“ 中文翻譯：   液相處延; 液相取向附生; 液相外延“liquid-phase epitaxy growth“ 中文翻譯：   液相晶體外延生長“low temperature epitaxy“ 中文翻譯：   低溫外延“epitaxis“ 中文翻譯：   外延生長“epitaxic oxidation“ 中文翻譯：   外延氧化作用

epithalamium

The high - power semiconductor quantum well ( qw ) laser is a kind of luminescence device with superior performance , it has longe - lived , low threshold current density , high efficiency , high luminosity and excellent monochromatic , coherence , directionality , etc . the high - power semiconductor laser is widely applied to the fields , such as military , industrial machining , communication , information processing , medical treatment , etc . the material ' s epitaxy is the foundation of the whole laser ' s fabricating , and it has important influence on the optics and electricity performance about the laser 大功率半導體量子阱激光器是一種性能優越的發光器件，具有壽命長、閾值電流密度低、效率高、亮度高以及良好的單色性、相干性、方向性等特點，廣泛應用于軍事、工業加工、通信及信息處理、醫療保健等領域。材料的外延生長是整個激光器器件制作的基礎，對器件的光學和電學性能有著重要的影響，生長不出優質的材料體系，獲得高性能的器件就無從談起，因此，材料的外延生長便成為了整個半導體激光器制作過程之中的重中之重。

Proceed with concept , classification and characteristic of government ' s information resources , through analyzing concept intension and epitaxy , sum up , happen government information resources characteristic , through method that compare and analyse , find out our government information resources build problem that store in in the course 從政府信息資源的概念、分類及特點入手,通過分析概念內涵及外延,歸納出政府信息資源特點,通過對比分析的方法,找出我國政府信息資源建設過程中存在的問題。采用實例調查的方法,總結政府信息資源建設的規律,以期構建政府信息資源建設的體系。

In the paper we mainly researched space gainp2 / gaas / ge high efficiency tandem cells “ making process by home - made low pressure mocvd technology and new solar concentrators . firstly , we presented reseached and development of solar cells in china and foreign countries ; secondly , on the basis of fundamental priciples and theories , we discussed some factors of influcing conversion efficiency of solar cells , and analysed the i - v output feature of two - junction tandem cells ; then the design concept of gainp2 / gaas / ge two - junction tandem cells was discussed , the detailed aspects of gainp2 / gaas / ge tandem cells epitaxy growth by low pressure mocvd was studied , and some questions on epitaxy growth ( such as crystal qualities , interface stress , element interdiffusion , n - and p - type doping et all ) were solved ; after that , the cell fabrication process was described ; finally , we reseached the hot pressing and mould process technology of an arched line - focus fresnel lens made by pmma , designed and fixed new solar concentrators 本文致力于用自制的低壓mocvd裝置進行cainp _ 2 / gaas / ge空間用高效級聯太陽能電池制作的工藝以及聚光太陽能電池組件的研究。首先，介紹了國內外太陽能電池的研究現狀及應用情況；其次，運用太陽能電池基本原理討論影響電池轉換效率的因素，分析了級聯電池的伏安特性；隨后，討論了cainp _ 2 / gaas / ge雙結級聯電池的結構設計理念，研究了采用低壓mocvd技術生長cainp _ 2 / gaas / ge級聯太陽電池材料的工藝過程，解決了異質材料生長的結晶質量、界面應力、材料互擴散以及材料n 、 p型摻雜等一系列問題；然后總結了級聯電池的后工藝制作；最后，研究了以pmma為材料的菲涅耳線聚焦透鏡的熱壓成型工藝及其模具的加工工藝，設計并安裝完成新型聚光太陽能電池組件。

“ run the country with morality “ have extremely abundant and deep meaning and epitaxy , it announce morals in modern society live especially in country important status and function in managing , have pointed out the important task and method that the chinese society progresses all - side developing in the new century “以德治國”具有極其豐富而深刻的內涵與外延，它揭示了道德在現代社會生活特別是在國家治理中的重要地位與作用，指明了新世紀中國社會全面發展進步的重要任務與方法。

Originally in the article , i combine the modern education theory and teach and practise in person , on the basis of analysing teacher ' s quality intension and epitaxy , combine the characteristic of the historical discipline oneself , have put forward the content of three modernized respects of historical teacher ' s quality : historical modernization , historical teacher modernization , historical teacher ability modernization of structure of knowledge structure of image , role of teacher , 在本文中，筆者結合現代教育理論和本人教學實踐，在分析教師素質內涵和外延的基礎上，結合歷史學科自身的特色，提出了歷史教師素質的現代化的三個方面的內容：歷史教師角色形象的現代化、歷史教師知識結構的現代化、歷史教師能力結構的現代化。

The fabrication methods such as molecular - beam epitaxy and metal - organic chemical vapor deposition and experimental studies of their properties have been reported , and theoretical studies mainly concentrate on the impurity binding energy varying the size of the wire , the effect of the applied electric field or magnetic field , and photoionization of impurities 在實驗上已經用分子束外延和金屬有機化學汽相淀積等技術對其物理性質進行了廣泛的研究，而理論上的研究主要集中于研究量子線的尺寸對雜質束縛能的影響、外加電場或磁場的作用及雜質的光致電離效應。

Recently , the n / n + and p / p + epitaxial structures have been applied in the study and production of microwave transistor and ultra - large - scale integrated circuits ( ulsi ) , and the memorial maintain time of dynamic random access memory can be improved , latch - up effect and soft - error induced by a particles can be resolved through the combination of epitaxy and ig 采用這種結構與ig工藝相結合，能夠大大地提高動態存儲器dram的記憶保持時間，是解決電路中閂鎖效應( latch - up )和粒子引起的軟失效( soft - error )的最佳途徑。

The main results are as follows : 1 . through theoretical analysis and computer aided simulation , optimized design process of strained si channel si / sige heterostructure devices are given , including the thickness of gate dioxide and each epitaxy layer , ge content , the doping of each epiatxy layer 主要內容為: 1 .通過理論分析和軟件模擬,給出了sigehcmos的優化設計原則,主要包括:氧化層的厚度、各外延層的厚度和摻雜以及sige虛擬襯底的ge組分,獲得了較為匹配的pmosfet和nmosfet ,并分別給出了其相關參數。

A monte - carlo method has been developed for simulating the growth of epitaxy flims . the program was compiled using turbo basic language . the influence of growth rate and temperature on surface morphology was studied . the model we used was an advanced diffusion limited aggregation ( dla ) model . the process of deposition and diffusion were considered in this model 本文利用montecarlo方法,結合薄膜生長理論,采用turbobasic語言編寫程序,對外延薄膜的生長過程進行了模擬。所用的模型為改進的擴散有限聚集模型( dla ) ,研究了薄膜生長過程中沉積速率和襯底溫度對表面形貌的影響。

4 the cleanout and the passivation of si surface was carried out by a two - step process to overcome the surface oxide layer and balance the charge between the substrate and epitaxy . by this way , the crystal quality and emission characteristic of zno thin films can be improved , which provide a way to resolve the native oxide layer of si substrate 4 、通過用等離子體對硅襯底表面進行清洗和鈍化兩步處理，解決硅襯底表面的氧化層和界面電荷平衡問題，制備出了高質量的氧化鋅薄膜材料，找到了一條獲得了高質量的氧化鋅薄膜的新途徑。

Many kinds of vcsels has been fabricated in the domestic and an kind of algaas microtip with micrometer dimension has been successfully grown on gaas substrate with self - organization by liquid phase epitaxy ( lpe ) . it was reported that a vcsel and a si microtip can be simply aligned together using an adhesive agent . hi this article , the peculiarity of vcsel has been observed and investigated 在vcsel的制備方面，國內也已經有著很成熟的經驗，已經成功的制造出了多種類型的器件；我們半導體教研室利用現有的液相外延生長設備采用自組織生長的方法成功制備出外觀形貌規整的m量級尺寸的algaas的類探針點。

Investigations are made of porous sic ( psc ) , both as a potentially attractive material for fabricating uv light emitting diodes ( leds ) , efficient photodetectors and hydrocarbon gas sensors , and as a novel substrate for epitaxy , chiefly because of its much higher photoluminescence ( pl ) emission efficiency than that from bulk sic 作為一種有潛在吸引力的材料，多孔sic ( psc )可以用來制備紫外發光二極管、靈敏光探測器、碳氫氣體探測器和新穎的外延材料，目前被廣泛研究。引起大家感興趣的一個原因就是psc比晶體sic有更高的發光強度。

The design and analysis of vertical pnp transistor was accomplished through the relationship between carriers lifetime of epitaxy layer and current gain , rate of surface combination and leakage current , carriers lifetime of epitaxy layer and switch speed 從外延層載流子壽命與晶體管放大倍數，表面復合率與漏電流，以及外延層載流子壽命與晶體管開關速度等方面對于輸出級縱向pnp管進行了較為詳細的設計與分析，達到了電路中對輸出級縱向pnp管主要參數指標的要求。

Aln is an important compound semiconductor material with wide band - gap , which has wurtzite structure too . because of their many excellent physical properties , aln thin films were applied in blue - uv emitting materials , epitaxy buffer layer , soi material and saw device with ghz band Aln具有許多優異的物理性能，在藍光、紫外發光材料及熱釋電材料、外延過渡層、 soi材料的絕緣埋層和ghz級聲表面波器件等方面有著重要的應用。

It plays a significant role in the studies of the in - plane optical anisotropy of the lower dimensional structures of semiconductor materials their quantum - well superlattices , or the semiconductor surface restructuring , or the real time monitoring in the semiconductor epitaxy growth process 它對研究半導體材料及其量子阱超晶格等低維結構中的平面內光學各向異性、半導體表面重構和對外延生長過程中的實時監控都具有重要作用。

To study its properties and obtain high quality thin films , a variety of techniques have been used such as molecular beam epitaxy ( mbe ) , metal organic chemical vapor deposition ( mocvd ) , magnetron sputtering , pulsed laser deposition , to prepare zno thin films 為了獲得高質量的氧化鋅薄膜材料，人們已采用分子束外延，有機化學汽相沉積，脈沖激光沉積，磁控濺射等各種技術來制備氧化鋅薄膜材料。

With the development of gesi epitaxy technology , the performance of gesi hbts is already superior to si bjts , and to algaas / gaas hbts and gaas mesfets in some aspects , so the gesi hbts have much prospect for wide applications 隨著gesi外延技術的發展， gesihbt的性能遠遠優于sibjt ，并在某些方面優于algaas / gaashbt 、 gaasmesfet ，所以gesihbt具有廣闊的應用前景。

High quality single - crystal zns - based ii - vi thin films have been prepared on gaas and gap substrate using molecular beam epitaxy ( mbe ) technique . successful n - type doping of znsxse1 - x alloy using aluminum source has been carried out 本文研究了在gaas和gap襯底上，本征型和n型al摻雜zns基單晶薄膜的分子束外延生長，獲得了高質量的單晶外延薄膜。

In this paper x - ray diffraction dynamical theory and kinematicai theory fbr low - dimension semi - conductor hetero - epitaxy materials are analyzed particularly and are applied to analyze the structure of 1ow - dimension semi - conductor =摘要本文詳細分析了x射線衍射的動力學理論和運動學理論，并將其應用到低維半導體材料的結構分析。