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dopant

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dopant n.【物理學】摻雜劑，摻雜物。

n. 【物理學】摻雜劑，摻雜物。 “acceptor dopant“ 中文翻譯：   受主摻質“donor dopant“ 中文翻譯：   施鐘質“dopant activation“ 中文翻譯：   摻雜劑活化“dopant atom“ 中文翻譯：   摻雜劑原子“dopant chemistry“ 中文翻譯：   摻雜化學“dopant concentration“ 中文翻譯：   雜物濃度“dopant density“ 中文翻譯：   摻雜密度“dopant distribution“ 中文翻譯：   摻雜劑分布“dopant donor“ 中文翻譯：   施體滲染劑“dopant gas“ 中文翻譯：   摻雜劑氣體; 摻雜氣“dopant gradient“ 中文翻譯：   摻雜梯度“dopant host“ 中文翻譯：   固體摻雜劑源“dopant material“ 中文翻譯：   摻雜材料“dopant p“ 中文翻譯：   型摻雜劑“dopant predeposition“ 中文翻譯：   摻雜劑預淀積“dopant profile“ 中文翻譯：   摻雜分布圖“dopant redistribution“ 中文翻譯：   摻雜再分布“dopant resist“ 中文翻譯：   摻雜劑抗蝕劑“dopant source“ 中文翻譯：   摻雜劑源“implanted dopant“ 中文翻譯：   注入雜質“impurity dopant“ 中文翻譯：   雜質“isolation dopant“ 中文翻譯：   隔離區摻雜劑“liquid dopant“ 中文翻譯：   液體摻雜劑“p dopant“ 中文翻譯：   p 型摻雜劑“dopan“ 中文翻譯：   多潘; 甲基尿嘧啶氮芥“dopamine，da“ 中文翻譯：   多巴胺

dope

It also showed that doping concentration as well as the dopant itself had great influence on device character ; the el spectrum of devices indicated that the emitting sites in the doped devices shifted from alq molecules to the dopant and the current mechanism of the device was also changed when doping in the host 從能帶結構來看，摻雜劑的引入相當于在發光層中引入了新的能級結構，這是摻雜后器件性能發生改變的根本原因；適當的摻雜劑和摻雜濃度能夠大大提高器件性能（在20v直流電壓驅動電壓下獲得了亮度為25000cd / m2的摻雜型有機el器件） 。

On this condition , based on the experimental results gotten by the microwave absorption dielectric - spectrum measure technique , the photographic process at room temperature in agcl cubic microcrystals doped with k4fe ( cn ) 6 is simulated . through the optimization of simulating parameters , not only the cross - section and trap depth of the shallow electron trap induced by the dopant , but also the optimal doping amount is obtained 在此基礎上，以微波吸收介電譜檢測技術的實驗結果為依據，對摻有k _ 4fe ( cn ) _ 6的agcl立方體微晶在室溫下的曝光過程進行了模擬，通過調節模擬參數，不但計算出由摻雜劑引入的淺電子陷阱的俘獲截面和陷阱深度，而且得到了這種摻雜乳劑的最佳摻雜濃度。

In this dissertation polyaniline conjugated conducting polymer with different structural texture and properties is prepared , using ( nhu ) 2s3oa / llci solution system . the molecular structure of undoped polyaniline is characterized . polyaniline with different conductivity can be gotten by changing the type of dopant and doping condition 再采用( nh _ 4 ) _ 2s _ 3o _ 8 hci溶液體系制備出不同性能的聚苯胺導電聚合物，對不同的鹽酸濃度、不同氧化劑與苯胺的摩爾比、不同的溫度下合成的聚苯胺進行了性能上的比較，并對本征態聚苯胺的結構進行了表征。

The thermoelectric properties of the samples greatly depend on the doping elements and constituent concentration . the sample with la - dopant shows better thermoelectric performances than those with other three dopants . it should be pointed out that there exists an appropriate range of doping values to improve the thermoelectric properties of the samples 這四種摻雜劑都不同程度的提高了材料的熱電性能，但只有摻la能夠很好的改善材料的性能，而且摻雜量不是越大越好，而是表現出有一個最優摻雜的限度。

Begin with the comparation of two widely used methods producing the strontium titanate , the oxalate decomposition method shows its advantage hi the microstructure and future performance . the effect of caco3 is studied , and so is the effect of the donor dopant , such as nb2o5 , y2o3 and la2o3 . the dopant of tio2 is also considered , which involve ti / sr ratio , sintering temperature , oxygen partial pressure , donor dopant , grain growth and future electric performance 從對比草酸鹽分解法和固相合成法這兩種制備srtio _ 3主晶相的方法開始，在予合成料的制備過程中分析了施主nb _ 2o _ 5 、 y _ 2o _ 3 、 la _ 2o _ 3以及caco _ 3所產生的影響；在tio _ 2摻雜的問題上，綜合考慮了ti / sr比、燒結溫度、氧分壓、施主摻雜、晶粒的微觀生長與成瓷后的元件宏觀電性能等之間的相互關系。

The paper put forward an aim to deposit n - doped titanium dioxide film on glass substrate by the atmospheric pressure chemical vapor deposition ( apcvd ) method . using ticl4 and oa as precursors , titanium dioxide thin films had been deposited by apcvd method . nitrogen had also been doped in the film when n2o gas was added as the dopant 在實驗室條件下以ticl _ 4和o _ 2為先驅體，采用常壓化學氣相沉積法( apcvd )制備得到具有一定光催化性和親水性的tio _ 2薄膜，并且以n _ 2o作為摻雜劑，對薄膜進行了n的摻雜，在一定程度上提高了薄膜可見光照射下的光催化性和親水性。

Ternary compound bnxpi - x films of quality are deposited and the ultraviolet absorbance characteristics of bnxp , - x films were investigated in the thesis , too . with the quantity of phosphorus dopant , the optical bandgap modulation of bnxpi is achieved successfully . in addition , the combined intensity of bnxp , - x films and substrates was enhanced by depositing the buffer layer 實驗采用磷對氮化硼進行摻雜，成功地在光學石英玻璃襯底上沉積了磷摻雜氮化硼( bn _ xp _ ( 1 - x ) )薄膜，研究了該薄膜的紫外光敏特性，其吸收邊在240nm 400nm的紫外波段內可以連續變化，同時也實現了對氮化硼光學帶隙在3 . 8ev 5 . 3ev范圍內的連續可控調制。

The fabrication parameters were preliminarily optimized . the morphology and composition of the samples of the diamond film for different b / c ratios was investigated by scanning electron micrograph ( sem ) and raman scattering spectroscopy ( raman ) . the content of different levels of b dopant in the diamond film was tested by secondary ion mass spectrometry ( sims ) 闡述了摻硼金剛石膜的制備工藝，研究了摻硼金剛石膜成核和生長的影響因素，初步優化了沉積摻硼金剛石膜工藝參數，同時對摻硼金剛石膜進行了掃描分析、拉曼分析、二次離子質譜分析和電阻率測試。

The oxide and reduce potential and the dopant concentration . the experiments of degradation methyl blue a1so showed that the photocatalytic activity could be greatly improved with vzos - loaded tio2 , maybe that loading v2o5 would accelerate the electron captured and charge transferring , change the samp1e surface hydrophilic and absorption 納米tio _ 2 - v _ 2o _ 5復合光催化劑對次甲基藍的降解實驗表明，復合v _ 2o _ 5后tio _ 2可以加速電子捕獲和電荷遷移速率，改變了樣品表面吸附親合力，使降解效率相比純tio _ 2有很大提高。

The problem of doped mpc ' s dimerization is discussed and different kinds of solving methods are presented . the relationship between the composites “ matrix and dopant component , structure and optical properties is studied . a series of important conclusions and creative achievements are obtained 著重研究了無機基復合金屬酞菁材料的制備技術及其成分、結構與光譜學性能的關聯、影響和控制規律，并以光限幅性能為應用背景拓展研究，取得了一系列結論和創新性成果，為制備新型高效有機無機復合光限幅材料提供了理論依據和物質基礎。

The bandgap is found to broaden with increasing dopant concentration , and it is found that doping with al has the effect of shifting the optical absorption to the shorter wavelength , with both cases being attributed to the burstein - moss shift . we report a study on the fabrication and characterization of ultraviolet photodetectors based on zno : al films . using sol - gel technique , highly c - axis oriented zno films with 5 mol . % 為了研究zno : al薄膜在紫外光探測方面的性能,我們采用溶膠-凝膠旋涂法在si襯底上生長出具有高度c軸取向的zno : al薄膜,摻al濃度為5mol . % ,并以此作為有源區成功制備出了au / zno : al / au光電導型紫外探測器的原型器件,并對其i - v特性、紫外光響應和光致發光等方面的性能進行了研究。

( 1 ) effects of externally applied electric fields on photorefractive two - beam coupling are analyzed . theoretic dependence of the intensity gain factor on applied field e0 in sbn : 60 is presented . and the experimental results obtained in two sbn : 61 : cr crystal samples with different dopant concentration show clearly that for properly applied fields , a larger f can be achieved effectively than that obtained with no field applied 由兩塊不同摻cr濃度的sbn 61 cr晶體得到的實驗結果同時表明，適當的外電場作用能夠有效提高晶體的二波耦合增益，并且，外電場的作用使晶體的響應速度大大提高，而晶體的最佳耦合角與外電場之間沒有明顯的依賴關系。

From then on , the above two shortcomings had been overcome . impurity concentration and junction depth can be accurately controlled and freely adjusted . both low and high dopant concentration can be gained easily , and ideal distribution of ga in si can also be achieved with uniform surface concentration , good repeatability and high eligibility and excellence ratio , which have greatly improved comprehensive performances of the devices 此工藝發明以來，克服了上述兩者的弊端，雜質濃度和結深能準確控制而又能任意調整，可進行低、高濃度階段性摻雜，得到元素ga在si中的理想分布，而且表面濃度均勻一致、重復性好、合格率和優品率高，改善和提高了器件的綜合性能。

The relationship between the composites “ matrix and dopant component , structure and optical properties is studied . a series of important conclusions and creative achievements are obtained . using pore structure measurement technique , the changes of pore structure of silica gel glass matrix under different sol - gel processing conditions are studied 著重研究了無機基復合金屬酞菁材料的制備技術及其成分、結構與光譜學性能的關聯、影響和控制規律，并以光限幅性能為應用背景拓展研究，取得了一系列重要結論和創新性成果，為制備新型高效有機無機復合光限幅材料提供了理論依據和物質基礎。

But the grain growth , grain semiconduction and grain boundary insulation were influenced by many factors , such as the type and contents of dopants , sintering temperature and so on . therefore , in this thesis the effect of the restore sintering temperature , the oxygenize temperature , the donor and acceptor dopant on the dielectric and varistor properties of devices were studied . with sem , the microstructure of srtio3 - based double function ceramic was analyzed 而晶粒生長、晶粒半導化和晶界絕緣化受到多種因素的影響，諸如雜質的種類和含量、燒成溫度等，因此本論文研究了還原燒成溫度、中溫氧化溫度、施主和受主摻雜等對srtio _ 3基陶瓷的壓敏和介電性能的影響，并借助于sem分析對srtio _ 3基雙功能陶瓷的微觀結構進行了分析。

The reason to cause this phenomenon is due to the change of electric field in the blue oled to induce the probality of the carrier shifted and the hole - electron recombination zone changed , which was a possible alternative to achieve color display . 3 ) device with the structure of ito / npb / adn : balq3 / alq3 / mg : ag was fabricated . when the balq3 dopant concentration was about 25 mol % , a high performance devcie with luminous efficiency of 1 . 0 lm / w , the peak of emission spectrum at 440 nm , the cie coordinate at ( 0 . 18 , 0 . 15 ) , and half lifetime of unencapsulated device about 950 hrs was achieved 導致本現象的原因是由于各有機層電場強度的變化影響了空穴和電子的隧穿幾率,從而導致載流子的復合區域發生改變而發出不同顏色的光; 3 )制備了結構為ito / npb / adn : balq3 / alq3 / mg : ag的藍光oled ,空穴阻擋材料balq3的摻入顯著影響了oled的光電性能,當balq3的摻雜濃度為25mol %時, oled的發光效率為1 . 0lm / w ,發光光譜的峰值為440nm ,色純度為( 0 . 18 , 0 . 15 ) ,未封裝器件的半衰期達到了950小時; 4 )在藍光材料adn中摻雜npb 、 balq3和tbp三種材料時,不僅改善了器件的發光亮度和色純度,而且提高了器件的發光效率和壽命。

Antimony doped tin oxide ( ato ) and indium tin oxide ( ito ) thin films have been prepared by a sol - gel process using inorganic metal salts as precursors . the effects of heat - treatment atmosphere , temperature , time and dopant content on the electrical and optical properties of thin films were investigated . the fine patternings of the ato films were fabricated by chemical modification and sol - gel method 本文以無機鹽為出發原料，采用溶膠?凝膠法制備了光學和電學性能較為優良的摻銻二氧化錫( ato )薄膜和摻錫氧化銦( ito )薄膜，進一步研究了熱處理氣氛、溫度、時間、摻雜量對薄膜電學及光學性能的影響。

Based on previous works , the emulsion polymerization of aniline in water ? xylene system with sulfosalicylic acid as dopant was studied . the conductivity of polyaniline was 4 . 2 s - cm “ 1 . the differences between the polyaniline prepared by emulsion polymerization and hydrochloric acid solution polymerization were evaluated 本論文在過去研究工作的基礎上，以水?二甲苯為分散相、磺基水楊酸為摻雜劑、采用乳液聚合法合成了電導率達4 . 2s ? cm ~ ( - 1 )的聚苯胺。

1 . polybenzidine ( pbz ) was polymerized by using chemical method in organic system and with ( nh4 ) _ 2s _ 2o _ 8 as oxidant , hclo4 as dopant . the electrochemical behaviors of pbz electrode were studied by cyclic voltammetry , charge - discharge test and electrochemical impedance techniques 1 .用化學直接氧化法在乙腈溶液中,以高氯酸為摻雜劑制備了聚聯苯胺,用循環伏安,交流阻抗,直流充放電對其電容行為進行了研究,聚聯苯胺電極比電容為150f / g 。