arsenide n.砷化物。
n. 砷化物。 “aluminium arsenide“ 中文翻譯： 砷化鋁“antimony arsenide“ 中文翻譯： 砷化銻“arsenide hydrogen“ 中文翻譯： 砷化氫, 胂“arsenide poisoning“ 中文翻譯： 砷化物中毒“barium arsenide“ 中文翻譯： 砷化鋇“boron arsenide“ 中文翻譯： 砷化硼“chromic arsenide“ 中文翻譯： 砷化鉻“chromium arsenide“ 中文翻譯： 一砷化鉻“copper arsenide“ 中文翻譯： 砷化銅“ferrous arsenide“ 中文翻譯： 二砷化三鐵“gallium arsenide“ 中文翻譯： 砷化鎵〔一種合成化合物，主要用作半導體材料〕。 “gallium-arsenide“ 中文翻譯： 砷化鉀“hydrogen arsenide“ 中文翻譯： 砷化氫; 砷化三氫“indium arsenide“ 中文翻譯： 砷化銦“iron arsenide“ 中文翻譯： 砷化鐵“lead arsenide“ 中文翻譯： 砷化鉛“lithium arsenide“ 中文翻譯： 砷化鋰“magnesium arsenide“ 中文翻譯： 砷化鎂“manganese arsenide“ 中文翻譯： 砷化二錳“mercury arsenide“ 中文翻譯： 砷化汞“nickel arsenide“ 中文翻譯： 砷化鎳“silver arsenide“ 中文翻譯： 砷化銀“sodium arsenide“ 中文翻譯： 砷化鈉“strontium arsenide“ 中文翻譯： 砷化鍶“arsenide gallium monocrystal“ 中文翻譯： 砷化鎵單晶“arsenicum sublimatum“ 中文翻譯： 信石
arsenious |
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Gaas / algaas quantum well photodetectors ( qwips ) are new type devices and progressed rapidly in recent 20 years . qwips utilizing intersubband absorption between gallium arsenide ( gaas ) well and aluminum gallium arsenide ( alxga1 _ xas ) barriers were perfected . therefore , the ability to accurately control the band structure and hence the spectral response , as well as both established technology for growing and processing gaas optical devices and commercially available large area vlsi gaas ic ' s , makes gaas / algaas qwips attractive devices for use in very large focal plane arrays ( fpas ) , especially available in the range of long wavelength 8 - 12 urn Gaas algaas量子阱紅外探測器( qwips )是近二十年來迅速發展起來的一種新型紅外探測器，它成功地利用了gaas勢阱和al _ xga _ ( 1 - x ) as勢壘之間的子帶間吸收，使之具有能帶結構可精確設計從而獲得指定光譜響應的特點，加之成熟的材料生長技術、器件工藝，以及商業上可獲得大面積的vlsigaas集成電路，使得gaas algaasqwips尤其適宜制作8 12 m長波范圍的大面陣探測器。 |
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This paper reviewed new progress of biosensor applying to environmental monitoring , including detection of arsenide , sulphide , insecticide and herbicide ' s remains , on - line monitoring of wastewater quality , measurement of bod and ammonia nitrogen , detection of phenol and odorous compounds , as well as monitoring of air and exhaust gas 摘要綜述生物傳感器應用于環境監測的最新進展，包括對砷化物、硫化物和殺蟲劑及除草劑殘留物的檢測，對廢水水質的在線監側，對bod和氨氮的測定，對酚類和有氣味的化合物的檢測以及對大氣和廢氣的監測等方面。 |
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Cadmium germanium arsenide , cdgeas2 , has promising advantage for its attractive nonlinear optical properties in all chalcopyrite semiconductors . it has an extremely high nonlinear coefficient , a wide infrared transparency range , but crystal of cdgeas2 has a strong absorption at 5 . 5 m which related to a native acceptor - defect 砷化鍺鎘晶體( cdgeas2 )是黃銅礦類半導體晶體中綜合性能最優者,其非線性光學系數和遠紅外區透過率很高,但其在中紅外區5 . 5 m有較強的吸收。 |
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Employees of large companies . ( such as ibm , general electric and hewlett packard ) , also frequently break away and form their own small companies to develop , produce and market new advanced products , services and technologies , such as the gallium arsenide high - speed semi - conductor as a replacement for silicon 通用電氣和惠普等大公司的員工也經常離職成立自己的小公司來開發、生產和推廣先進的新產品、服務和技術，例如：用于替代硅的砷化鎵高速半導體。 |
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Such an advance would enable engineers to incorporate both electronic and optical devices onto cheap silicon chips rather than being compelled to employ costly - to - make lasers based on “ exotic ” semiconductor materials such as gallium arsenide or indium phosphide 如果成功，工程師就能在成本低廉的矽晶片上同時制作電子和光學裝置，不需使用砷化鎵或磷化銦等稀有半導體材料，制作成本高昂的半導體雷射。 |
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It fits smd surface crystal , optic crystal , optic glass , semiconductor silicon slice , quartz crystal slice , piezoelectricity porcelain , arsenide gallium , linb03 , molybdenum slice and metal , nonmetal brittleness material both single side polishing and rubbing of pressurizing cmponets 本機主要適用于硅片、石英晶片、 smd表面貼裝晶體、光學水晶、鈮酸鋰、玻璃、陶瓷片等薄脆金屬或非金屬材料的雙面研磨或拋光。 |
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After a period of clinical application , we concluded that tbe nickel arsenide laser could alleviate the patients ' suffering and achieve durable curative effects with its unique performance superiority and clinical features 砷化鎳激光,通過一段時間的臨床和總結,此種激光以獨有的性能優勢及臨床特征為病人解決了痛苦,獲得持久性療效。 |
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Used in bipolar chipmaking in place of the more expensive gallium arsenide process , sige allows for significant improvements in operating frequency , current , noise , and power capabilities 在二極管芯片制造中用來代替功耗更高的砷化鎵， sige可以顯著地改善操作頻率、電流、噪音和電源容量。 |
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Method for the determination of 12 species of impurities including copper , maganese , magnesium , vanadium , titanium in high - purity gallium used for gallium arsenide by icp spectrometry 砷化鎵用高純鎵中銅錳鎂釩鈦等12種雜質的等離子體光譜分析法 |
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Testing of materials for semiconductor technology - determination of impurity content in semiconductors by infrared absorption - part 2 : boron in gallium arsenide 半導體工藝材料試驗.通過紅外線吸收測定半導體中雜質 |
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Testing of materials for semiconductor technology - determination of impurity content in semiconductors by infrared absorption - part 1 : carbon in gallium arsenide 半導體工藝用材料的檢驗.通過紅外線吸收測定- -連 |
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Testing of materials for semiconductor technology - determination of dislocations in monocrystals of iii - v - compound semi - conductors - part 1 : gallium arsenide 半導體工藝材料的檢驗. -化合物單晶體錯位的測定 |
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Test method for deep level el2 concentration of undoped semi - insulating monocrystal gallium arsenide by measurement infrared absorption method 非摻雜半絕緣砷化鎵單晶深能級el2濃度紅外吸收測試方法 |
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Hygienic determination method of arsenide in air of residential areas - silver dithyldithiocarbamate spectrophotometric method 居住區大氣中砷化物衛生標準檢驗方法二乙氨基二硫代甲酸銀分光光度法 |
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Preparation of samples of the constant composition region of epitaxial gallium arsenide phosphide for hall effect measurements 測量霍爾效應用恒定成分范圍的外延磷化砷化鎵試樣的制備 |
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Test method for wavelength of peak photoluminescence and the corresponding composition of gallium arsenide phosphide wafers 磷化砷化鎵片的最大光致發光波長及其相應成分的試驗方法 |
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Test method for carbon concentration of semi - insulating monocrystal gallium arsenide by measurement infrared absorption method 半絕緣砷化鎵單晶中碳濃度的紅外吸收測試方法 |
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Test method for crystallographic perfection of gallium arsenide by molten potassium hydroxide etch technique 用熔融氫氧化鉀腐蝕技術測試砷化鎵結晶完整性的試驗方法 |
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Many sulphides , selenides , and telluides have the nickel arsenide , nias , type of structure < uk >許多硫化物、硒化物和碲化物具有砷化nias型的結構。 < / uk > |